Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2003
• Hauptverfasser: Valakh, M.Ya., Strelchuk, V.V., Kolomys, O.F., Hartnagel, H.L., Sigmund, J.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118031
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures / M.Ya. Valakh, V.V. Strelchuk, O.F. Kolomys, H.L. Hartnagel, J. Sigmund // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 287-293. — Бібліогр.: 34 назв. — англ.

Intersubband plasmon-phonon excitations in InAs/AlSb with InSb- and AlAs-like interfaces were studied using the Raman scattering method. It was found that InSb interface is characterized by a decreasing concentration and increasing mobility of 2D electrons in InAs quantum wells. In the case of AlAs...