Regularities of visible photoluminescence creation in low-dimensional silicon structures
The evolution of time-resolved photoluminescence (PL) spectra in Au-doped nanocrystalline silicon films produced by laser ablation has been studied. The PL spectra with a relaxation time of nanoseconds are broad; they lie in the energy range 1.4-3.2 eV with a peak at 2.4-2.8 eV. At the longest times...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2003 |
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| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118034 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Regularities of visible photoluminescence creation in low-dimensional silicon structures / E.G. Manoilov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 303-306. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862637973335441408 |
|---|---|
| author | Manoilov, E.G. |
| author_facet | Manoilov, E.G. |
| citation_txt | Regularities of visible photoluminescence creation in low-dimensional silicon structures / E.G. Manoilov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 303-306. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The evolution of time-resolved photoluminescence (PL) spectra in Au-doped nanocrystalline silicon films produced by laser ablation has been studied. The PL spectra with a relaxation time of nanoseconds are broad; they lie in the energy range 1.4-3.2 eV with a peak at 2.4-2.8 eV. At the longest times of tens of microseconds, the spectra become narrower, with a peak at 1.6 eV. At intermediate times, two bands are observed: low-energy (1.6 eV) and high-energy, with the peak shifting from 2.7 to 2.1 eV with time increasing. The data are discussed in terms of quantum confinement, dielectric amplification, and manifestation of kinetically coupled electron-hole and exciton subsystems. Ions and atoms of gold passivate dangling bonds at Si surface and serve as catalysts for oxidation of nanocrystals.
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| first_indexed | 2025-11-30T23:47:52Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-118034 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-30T23:47:52Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Manoilov, E.G. 2017-05-28T09:04:56Z 2017-05-28T09:04:56Z 2003 Regularities of visible photoluminescence creation in low-dimensional silicon structures / E.G. Manoilov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 303-306. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 78.47.+p, 78.55.A, 78.67.Bf https://nasplib.isofts.kiev.ua/handle/123456789/118034 The evolution of time-resolved photoluminescence (PL) spectra in Au-doped nanocrystalline silicon films produced by laser ablation has been studied. The PL spectra with a relaxation time of nanoseconds are broad; they lie in the energy range 1.4-3.2 eV with a peak at 2.4-2.8 eV. At the longest times of tens of microseconds, the spectra become narrower, with a peak at 1.6 eV. At intermediate times, two bands are observed: low-energy (1.6 eV) and high-energy, with the peak shifting from 2.7 to 2.1 eV with time increasing. The data are discussed in terms of quantum confinement, dielectric amplification, and manifestation of kinetically coupled electron-hole and exciton subsystems. Ions and atoms of gold passivate dangling bonds at Si surface and serve as catalysts for oxidation of nanocrystals. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Regularities of visible photoluminescence creation in low-dimensional silicon structures Article published earlier |
| spellingShingle | Regularities of visible photoluminescence creation in low-dimensional silicon structures Manoilov, E.G. |
| title | Regularities of visible photoluminescence creation in low-dimensional silicon structures |
| title_full | Regularities of visible photoluminescence creation in low-dimensional silicon structures |
| title_fullStr | Regularities of visible photoluminescence creation in low-dimensional silicon structures |
| title_full_unstemmed | Regularities of visible photoluminescence creation in low-dimensional silicon structures |
| title_short | Regularities of visible photoluminescence creation in low-dimensional silicon structures |
| title_sort | regularities of visible photoluminescence creation in low-dimensional silicon structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118034 |
| work_keys_str_mv | AT manoiloveg regularitiesofvisiblephotoluminescencecreationinlowdimensionalsiliconstructures |