Regularities of visible photoluminescence creation in low-dimensional silicon structures

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2003
• Main Author: Manoilov, E.G.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118034
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Regularities of visible photoluminescence creation in low-dimensional silicon structures / E.G. Manoilov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 303-306. — Бібліогр.: 9 назв. — англ.

The evolution of time-resolved photoluminescence (PL) spectra in Au-doped nanocrystalline silicon films produced by laser ablation has been studied. The PL spectra with a relaxation time of nanoseconds are broad; they lie in the energy range 1.4-3.2 eV with a peak at 2.4-2.8 eV. At the longest times...