Avalanche multiplication of charge carriers in nanostructured porous silicon
The phenomenon of avalanche multiplication of charge carriers in Al/PS-(c-Si) sandwich-structures based on nanostructured porous silicon (PS) is studied. Experimentally received dependences of ionization rates on intensity of an electrical field correspond to the diffusion mechanism of electron-hole...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2003 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118035 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Avalanche multiplication of charge carriers in nanostructured porous silicon / D.F. Timokhov, F.P. Timokhov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 307-310. — Бібліогр.: 14 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118035 |
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Timokhov, D.F. Timokhov, F.P. 2017-05-28T09:05:47Z 2017-05-28T09:05:47Z 2003 Avalanche multiplication of charge carriers in nanostructured porous silicon / D.F. Timokhov, F.P. Timokhov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 307-310. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 72.80.Cw; 72.80.Ng; 72.40.+w; 73.40.Gk https://nasplib.isofts.kiev.ua/handle/123456789/118035 The phenomenon of avalanche multiplication of charge carriers in Al/PS-(c-Si) sandwich-structures based on nanostructured porous silicon (PS) is studied. Experimentally received dependences of ionization rates on intensity of an electrical field correspond to the diffusion mechanism of electron-hole pairs heating up to a threshold of ionization. The distinction of effective factors of shock ionization for electrons and holes is unsignificant. The estimation of length of free run of hot electrons is carried out at scattering of energy on the optical phonons. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Avalanche multiplication of charge carriers in nanostructured porous silicon Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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| title |
Avalanche multiplication of charge carriers in nanostructured porous silicon |
| spellingShingle |
Avalanche multiplication of charge carriers in nanostructured porous silicon Timokhov, D.F. Timokhov, F.P. |
| title_short |
Avalanche multiplication of charge carriers in nanostructured porous silicon |
| title_full |
Avalanche multiplication of charge carriers in nanostructured porous silicon |
| title_fullStr |
Avalanche multiplication of charge carriers in nanostructured porous silicon |
| title_full_unstemmed |
Avalanche multiplication of charge carriers in nanostructured porous silicon |
| title_sort |
avalanche multiplication of charge carriers in nanostructured porous silicon |
| author |
Timokhov, D.F. Timokhov, F.P. |
| author_facet |
Timokhov, D.F. Timokhov, F.P. |
| publishDate |
2003 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The phenomenon of avalanche multiplication of charge carriers in Al/PS-(c-Si) sandwich-structures based on nanostructured porous silicon (PS) is studied. Experimentally received dependences of ionization rates on intensity of an electrical field correspond to the diffusion mechanism of electron-hole pairs heating up to a threshold of ionization. The distinction of effective factors of shock ionization for electrons and holes is unsignificant. The estimation of length of free run of hot electrons is carried out at scattering of energy on the optical phonons.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118035 |
| citation_txt |
Avalanche multiplication of charge carriers in nanostructured porous silicon / D.F. Timokhov, F.P. Timokhov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 307-310. — Бібліогр.: 14 назв. — англ. |
| work_keys_str_mv |
AT timokhovdf avalanchemultiplicationofchargecarriersinnanostructuredporoussilicon AT timokhovfp avalanchemultiplicationofchargecarriersinnanostructuredporoussilicon |
| first_indexed |
2025-11-28T15:46:59Z |
| last_indexed |
2025-11-28T15:46:59Z |
| _version_ |
1850853835949473793 |