Avalanche multiplication of charge carriers in nanostructured porous silicon

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2003
• Main Authors: Timokhov, D.F., Timokhov, F.P.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118035
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Avalanche multiplication of charge carriers in nanostructured porous silicon / D.F. Timokhov, F.P. Timokhov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 307-310. — Бібліогр.: 14 назв. — англ.

The phenomenon of avalanche multiplication of charge carriers in Al/PS-(c-Si) sandwich-structures based on nanostructured porous silicon (PS) is studied. Experimentally received dependences of ionization rates on intensity of an electrical field correspond to the diffusion mechanism of electron-hole...