Role of silicon oxide defects in emission process of Si-SiO₂ systems
Si-rich SiO₂ films prepared by r.f. magnetron sputtering and annealed at 1150 °C are investigated by photoluminescence, Raman and EPR methods. It is found that emission spectrum of as-prepared samples contains one broad infrared band. It is shown that one-year aging in ambient air and low-temperatur...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2003 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118036 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Role of silicon oxide defects in emission process of Si-SiO₂ systems / M. Baran, B. Bulakh, N. Korsunska, L. Khomenkova, V. Yukhymchuk, M. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 282-286. — Бібліогр.: 23 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862729909217001472 |
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| author | Baran, M. Bulakh, B. Korsunska, N. Khomenkova, L. Yukhymchuk, V. Sheinkman, M. |
| author_facet | Baran, M. Bulakh, B. Korsunska, N. Khomenkova, L. Yukhymchuk, V. Sheinkman, M. |
| citation_txt | Role of silicon oxide defects in emission process of Si-SiO₂ systems / M. Baran, B. Bulakh, N. Korsunska, L. Khomenkova, V. Yukhymchuk, M. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 282-286. — Бібліогр.: 23 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Si-rich SiO₂ films prepared by r.f. magnetron sputtering and annealed at 1150 °C are investigated by photoluminescence, Raman and EPR methods. It is found that emission spectrum of as-prepared samples contains one broad infrared band. It is shown that one-year aging in ambient air and low-temperature annealing in oxygen atmosphere lead to the increase of infrared band intensity and the appearance of additional bands with maxima at 1.7 eV, 2.06 eV and 2.3 eV while annealing in hydrogen atmosphere results in the decrease of 1.7 eV and 2.06 eV band intensities. The decrease of crystallite sizes results in high-energy shift of infrared band while the peak positions of another ones (at 1.7, 2.06 and 2.3 eV) do not change. It is concluded that infrared band is connected with Si crystallites while another ones can be ascribed to silicon oxide defects, 1.7 and 2.06 eV bands being ascribed to oxygen-excess defects such as EX- and non-bridging oxygen hole centres.
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| first_indexed | 2025-12-07T19:17:29Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-118036 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:17:29Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Baran, M. Bulakh, B. Korsunska, N. Khomenkova, L. Yukhymchuk, V. Sheinkman, M. 2017-05-28T09:06:30Z 2017-05-28T09:06:30Z 2003 Role of silicon oxide defects in emission process of Si-SiO₂ systems / M. Baran, B. Bulakh, N. Korsunska, L. Khomenkova, V. Yukhymchuk, M. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 282-286. — Бібліогр.: 23 назв. — англ. 1560-8034 PACS: 61.46.+w; 61.72.Hh; 78.55-m; 78.66-w https://nasplib.isofts.kiev.ua/handle/123456789/118036 Si-rich SiO₂ films prepared by r.f. magnetron sputtering and annealed at 1150 °C are investigated by photoluminescence, Raman and EPR methods. It is found that emission spectrum of as-prepared samples contains one broad infrared band. It is shown that one-year aging in ambient air and low-temperature annealing in oxygen atmosphere lead to the increase of infrared band intensity and the appearance of additional bands with maxima at 1.7 eV, 2.06 eV and 2.3 eV while annealing in hydrogen atmosphere results in the decrease of 1.7 eV and 2.06 eV band intensities. The decrease of crystallite sizes results in high-energy shift of infrared band while the peak positions of another ones (at 1.7, 2.06 and 2.3 eV) do not change. It is concluded that infrared band is connected with Si crystallites while another ones can be ascribed to silicon oxide defects, 1.7 and 2.06 eV bands being ascribed to oxygen-excess defects such as EX- and non-bridging oxygen hole centres. This work has been financially supportedby National Academy of Sciences of Ukraine. One of the authors (L.Yu.K.) was supported by Grants of the President of Ukraine for young scientists. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Role of silicon oxide defects in emission process of Si-SiO₂ systems Article published earlier |
| spellingShingle | Role of silicon oxide defects in emission process of Si-SiO₂ systems Baran, M. Bulakh, B. Korsunska, N. Khomenkova, L. Yukhymchuk, V. Sheinkman, M. |
| title | Role of silicon oxide defects in emission process of Si-SiO₂ systems |
| title_full | Role of silicon oxide defects in emission process of Si-SiO₂ systems |
| title_fullStr | Role of silicon oxide defects in emission process of Si-SiO₂ systems |
| title_full_unstemmed | Role of silicon oxide defects in emission process of Si-SiO₂ systems |
| title_short | Role of silicon oxide defects in emission process of Si-SiO₂ systems |
| title_sort | role of silicon oxide defects in emission process of si-sio₂ systems |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118036 |
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