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Role of silicon oxide defects in emission process of Si-SiO₂ systems

Si-rich SiO₂ films prepared by r.f. magnetron sputtering and annealed at 1150 °C are investigated by photoluminescence, Raman and EPR methods. It is found that emission spectrum of as-prepared samples contains one broad infrared band. It is shown that one-year aging in ambient air and low-temperatur...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2003
Hauptverfasser: Baran, M., Bulakh, B., Korsunska, N., Khomenkova, L., Yukhymchuk, V., Sheinkman, M.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118036
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Role of silicon oxide defects in emission process of Si-SiO₂ systems / M. Baran, B. Bulakh, N. Korsunska, L. Khomenkova, V. Yukhymchuk, M. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 282-286. — Бібліогр.: 23 назв. — англ.

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