The features of phonon component of linear dichroism in uniaxially strained silicon crystals

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2003
• Hauptverfasser: Serdega, B.K., Venger, E.F., Matyash, I.E.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118038
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: The features of phonon component of linear dichroism in uniaxially strained silicon crystals / B.K. Serdega, E.F. Venger, I.E. Matyash // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 319-323. — Бібліогр.: 9 назв. — англ.

Linear dichroism induced by uniaxial compression strain in semiconductor silicon samples was studied with modulation spectroscopy technique using modulation of electromagnetic radiation polarization. We obtained a spectral characteristic of the difference between transmissions for polarizations parallel to the different axes of the optical indicatrix of the sample studied in the edge absorption region. A fine structure of characteristics was found in which one can observe event of acoustic phonons in the interband transitions. From the results of measurements of the total and difference transmission characteristics we calculated spectral dependence of linear dichroism. It has singularities related to the indirect interband transitions.