The features of phonon component of linear dichroism in uniaxially strained silicon crystals
Linear dichroism induced by uniaxial compression strain in semiconductor silicon samples was studied with modulation spectroscopy technique using modulation of electromagnetic radiation polarization. We obtained a spectral characteristic of the difference between transmissions for polarizations para...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2003 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118038 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The features of phonon component of linear dichroism in uniaxially strained silicon crystals / B.K. Serdega, E.F. Venger, I.E. Matyash // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 319-323. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862533747699613696 |
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| author | Serdega, B.K. Venger, E.F. Matyash, I.E. |
| author_facet | Serdega, B.K. Venger, E.F. Matyash, I.E. |
| citation_txt | The features of phonon component of linear dichroism in uniaxially strained silicon crystals / B.K. Serdega, E.F. Venger, I.E. Matyash // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 319-323. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Linear dichroism induced by uniaxial compression strain in semiconductor silicon samples was studied with modulation spectroscopy technique using modulation of electromagnetic radiation polarization. We obtained a spectral characteristic of the difference between transmissions for polarizations parallel to the different axes of the optical indicatrix of the sample studied in the edge absorption region. A fine structure of characteristics was found in which one can observe event of acoustic phonons in the interband transitions. From the results of measurements of the total and difference transmission characteristics we calculated spectral dependence of linear dichroism. It has singularities related to the indirect interband transitions.
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| first_indexed | 2025-11-24T06:14:22Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118038 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T06:14:22Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Serdega, B.K. Venger, E.F. Matyash, I.E. 2017-05-28T09:22:42Z 2017-05-28T09:22:42Z 2003 The features of phonon component of linear dichroism in uniaxially strained silicon crystals / B.K. Serdega, E.F. Venger, I.E. Matyash // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 319-323. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 78.20.C https://nasplib.isofts.kiev.ua/handle/123456789/118038 Linear dichroism induced by uniaxial compression strain in semiconductor silicon samples was studied with modulation spectroscopy technique using modulation of electromagnetic radiation polarization. We obtained a spectral characteristic of the difference between transmissions for polarizations parallel to the different axes of the optical indicatrix of the sample studied in the edge absorption region. A fine structure of characteristics was found in which one can observe event of acoustic phonons in the interband transitions. From the results of measurements of the total and difference transmission characteristics we calculated spectral dependence of linear dichroism. It has singularities related to the indirect interband transitions. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The features of phonon component of linear dichroism in uniaxially strained silicon crystals Article published earlier |
| spellingShingle | The features of phonon component of linear dichroism in uniaxially strained silicon crystals Serdega, B.K. Venger, E.F. Matyash, I.E. |
| title | The features of phonon component of linear dichroism in uniaxially strained silicon crystals |
| title_full | The features of phonon component of linear dichroism in uniaxially strained silicon crystals |
| title_fullStr | The features of phonon component of linear dichroism in uniaxially strained silicon crystals |
| title_full_unstemmed | The features of phonon component of linear dichroism in uniaxially strained silicon crystals |
| title_short | The features of phonon component of linear dichroism in uniaxially strained silicon crystals |
| title_sort | features of phonon component of linear dichroism in uniaxially strained silicon crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118038 |
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