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The features of phonon component of linear dichroism in uniaxially strained silicon crystals

Linear dichroism induced by uniaxial compression strain in semiconductor silicon samples was studied with modulation spectroscopy technique using modulation of electromagnetic radiation polarization. We obtained a spectral characteristic of the difference between transmissions for polarizations para...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2003
Main Authors: Serdega, B.K., Venger, E.F., Matyash, I.E.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118038
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:The features of phonon component of linear dichroism in uniaxially strained silicon crystals / B.K. Serdega, E.F. Venger, I.E. Matyash // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 319-323. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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