Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface
We performed the computer modelling of the dispersion dependences of real ε₁(E) and imaginary ε₂(E) parts of complex dielectric function ε(E) for 2H-PbI₂ crystals with atomically clean surface at the temperature 5 K and the light polarization E⊥C and determined the energy position of the exciton ban...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2003 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118040 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface / V.G. Dorogan, V.O. Zhydkov, F.V. Motsnyi, O.M. Smolanka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 346-348. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862633264415506432 |
|---|---|
| author | Dorogan, V.G. Zhydkov, V.O. Motsnyi, F.V. Smolanka, O.M. |
| author_facet | Dorogan, V.G. Zhydkov, V.O. Motsnyi, F.V. Smolanka, O.M. |
| citation_txt | Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface / V.G. Dorogan, V.O. Zhydkov, F.V. Motsnyi, O.M. Smolanka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 346-348. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We performed the computer modelling of the dispersion dependences of real ε₁(E) and imaginary ε₂(E) parts of complex dielectric function ε(E) for 2H-PbI₂ crystals with atomically clean surface at the temperature 5 K and the light polarization E⊥C and determined the energy position of the exciton bands and the parameters of the critical points. The obtained data allowed us to conclude the exciton spectra of this semiconductor can be described in terms of a single Wannier series with a large ground-state anomaly caused by a repulsive central-cell correction due to the cationic character of the exciton.
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| first_indexed | 2025-11-30T14:40:57Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118040 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-30T14:40:57Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Dorogan, V.G. Zhydkov, V.O. Motsnyi, F.V. Smolanka, O.M. 2017-05-28T09:36:57Z 2017-05-28T09:36:57Z 2003 Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface / V.G. Dorogan, V.O. Zhydkov, F.V. Motsnyi, O.M. Smolanka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 346-348. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 71.35.-y, 78.20.Ci, 78.20.Bh https://nasplib.isofts.kiev.ua/handle/123456789/118040 We performed the computer modelling of the dispersion dependences of real ε₁(E) and imaginary ε₂(E) parts of complex dielectric function ε(E) for 2H-PbI₂ crystals with atomically clean surface at the temperature 5 K and the light polarization E⊥C and determined the energy position of the exciton bands and the parameters of the critical points. The obtained data allowed us to conclude the exciton spectra of this semiconductor can be described in terms of a single Wannier series with a large ground-state anomaly caused by a repulsive central-cell correction due to the cationic character of the exciton. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface Article published earlier |
| spellingShingle | Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface Dorogan, V.G. Zhydkov, V.O. Motsnyi, F.V. Smolanka, O.M. |
| title | Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface |
| title_full | Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface |
| title_fullStr | Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface |
| title_full_unstemmed | Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface |
| title_short | Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface |
| title_sort | analysis of exciton reflection spectrum of 2h-pbi₂ layered single crystals with atomically clean surface |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118040 |
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