Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface
We performed the computer modelling of the dispersion dependences of real ε₁(E) and imaginary ε₂(E) parts of complex dielectric function ε(E) for 2H-PbI₂ crystals with atomically clean surface at the temperature 5 K and the light polarization E⊥C and determined the energy position of the exciton ban...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2003 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118040 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface / V.G. Dorogan, V.O. Zhydkov, F.V. Motsnyi, O.M. Smolanka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 346-348. — Бібліогр.: 12 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118040 |
|---|---|
| record_format |
dspace |
| spelling |
Dorogan, V.G. Zhydkov, V.O. Motsnyi, F.V. Smolanka, O.M. 2017-05-28T09:36:57Z 2017-05-28T09:36:57Z 2003 Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface / V.G. Dorogan, V.O. Zhydkov, F.V. Motsnyi, O.M. Smolanka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 346-348. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 71.35.-y, 78.20.Ci, 78.20.Bh https://nasplib.isofts.kiev.ua/handle/123456789/118040 We performed the computer modelling of the dispersion dependences of real ε₁(E) and imaginary ε₂(E) parts of complex dielectric function ε(E) for 2H-PbI₂ crystals with atomically clean surface at the temperature 5 K and the light polarization E⊥C and determined the energy position of the exciton bands and the parameters of the critical points. The obtained data allowed us to conclude the exciton spectra of this semiconductor can be described in terms of a single Wannier series with a large ground-state anomaly caused by a repulsive central-cell correction due to the cationic character of the exciton. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface |
| spellingShingle |
Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface Dorogan, V.G. Zhydkov, V.O. Motsnyi, F.V. Smolanka, O.M. |
| title_short |
Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface |
| title_full |
Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface |
| title_fullStr |
Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface |
| title_full_unstemmed |
Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface |
| title_sort |
analysis of exciton reflection spectrum of 2h-pbi₂ layered single crystals with atomically clean surface |
| author |
Dorogan, V.G. Zhydkov, V.O. Motsnyi, F.V. Smolanka, O.M. |
| author_facet |
Dorogan, V.G. Zhydkov, V.O. Motsnyi, F.V. Smolanka, O.M. |
| publishDate |
2003 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
We performed the computer modelling of the dispersion dependences of real ε₁(E) and imaginary ε₂(E) parts of complex dielectric function ε(E) for 2H-PbI₂ crystals with atomically clean surface at the temperature 5 K and the light polarization E⊥C and determined the energy position of the exciton bands and the parameters of the critical points. The obtained data allowed us to conclude the exciton spectra of this semiconductor can be described in terms of a single Wannier series with a large ground-state anomaly caused by a repulsive central-cell correction due to the cationic character of the exciton.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118040 |
| citation_txt |
Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface / V.G. Dorogan, V.O. Zhydkov, F.V. Motsnyi, O.M. Smolanka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 346-348. — Бібліогр.: 12 назв. — англ. |
| work_keys_str_mv |
AT doroganvg analysisofexcitonreflectionspectrumof2hpbi2layeredsinglecrystalswithatomicallycleansurface AT zhydkovvo analysisofexcitonreflectionspectrumof2hpbi2layeredsinglecrystalswithatomicallycleansurface AT motsnyifv analysisofexcitonreflectionspectrumof2hpbi2layeredsinglecrystalswithatomicallycleansurface AT smolankaom analysisofexcitonreflectionspectrumof2hpbi2layeredsinglecrystalswithatomicallycleansurface |
| first_indexed |
2025-11-30T14:40:57Z |
| last_indexed |
2025-11-30T14:40:57Z |
| _version_ |
1850857900292964352 |