New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET
New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. Non linear variations of the bias and gate-source and gate-drain cap...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2003 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118052 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET / N. Merabtine, S. Amourache, Y. Saidi, M. Zaabat, Ch. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 404-410. — Бібліогр.: 11 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862578187194597376 |
|---|---|
| author | Merabtine, N. Amourache, S. Saidi, Y. Zaabat, M. Kenzai, Ch. |
| author_facet | Merabtine, N. Amourache, S. Saidi, Y. Zaabat, M. Kenzai, Ch. |
| citation_txt | New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET / N. Merabtine, S. Amourache, Y. Saidi, M. Zaabat, Ch. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 404-410. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. Non linear variations of the bias and gate-source and gate-drain capacities have been found. A simulated values show excellent agreement with experimental results.
|
| first_indexed | 2025-11-26T17:39:30Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118052 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-26T17:39:30Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Merabtine, N. Amourache, S. Saidi, Y. Zaabat, M. Kenzai, Ch. 2017-05-28T14:36:43Z 2017-05-28T14:36:43Z 2003 New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET / N. Merabtine, S. Amourache, Y. Saidi, M. Zaabat, Ch. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 404-410. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 85.30.De https://nasplib.isofts.kiev.ua/handle/123456789/118052 New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. Non linear variations of the bias and gate-source and gate-drain capacities have been found. A simulated values show excellent agreement with experimental results. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET Article published earlier |
| spellingShingle | New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET Merabtine, N. Amourache, S. Saidi, Y. Zaabat, M. Kenzai, Ch. |
| title | New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET |
| title_full | New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET |
| title_fullStr | New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET |
| title_full_unstemmed | New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET |
| title_short | New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET |
| title_sort | new nonlinear model to determine cgs and cgd capacities of gaas mesfet |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118052 |
| work_keys_str_mv | AT merabtinen newnonlinearmodeltodeterminecgsandcgdcapacitiesofgaasmesfet AT amouraches newnonlinearmodeltodeterminecgsandcgdcapacitiesofgaasmesfet AT saidiy newnonlinearmodeltodeterminecgsandcgdcapacitiesofgaasmesfet AT zaabatm newnonlinearmodeltodeterminecgsandcgdcapacitiesofgaasmesfet AT kenzaich newnonlinearmodeltodeterminecgsandcgdcapacitiesofgaasmesfet |