New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET
New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. Non linear variations of the bias and gate-source and gate-drain cap...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2003 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118052 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET / N. Merabtine, S. Amourache, Y. Saidi, M. Zaabat, Ch. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 404-410. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862578187194597376 |
|---|---|
| author | Merabtine, N. Amourache, S. Saidi, Y. Zaabat, M. Kenzai, Ch. |
| author_facet | Merabtine, N. Amourache, S. Saidi, Y. Zaabat, M. Kenzai, Ch. |
| citation_txt | New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET / N. Merabtine, S. Amourache, Y. Saidi, M. Zaabat, Ch. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 404-410. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. Non linear variations of the bias and gate-source and gate-drain capacities have been found. A simulated values show excellent agreement with experimental results.
|
| first_indexed | 2025-11-26T17:39:30Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118052 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-26T17:39:30Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Merabtine, N. Amourache, S. Saidi, Y. Zaabat, M. Kenzai, Ch. 2017-05-28T14:36:43Z 2017-05-28T14:36:43Z 2003 New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET / N. Merabtine, S. Amourache, Y. Saidi, M. Zaabat, Ch. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 404-410. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 85.30.De https://nasplib.isofts.kiev.ua/handle/123456789/118052 New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. Non linear variations of the bias and gate-source and gate-drain capacities have been found. A simulated values show excellent agreement with experimental results. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET Article published earlier |
| spellingShingle | New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET Merabtine, N. Amourache, S. Saidi, Y. Zaabat, M. Kenzai, Ch. |
| title | New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET |
| title_full | New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET |
| title_fullStr | New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET |
| title_full_unstemmed | New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET |
| title_short | New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET |
| title_sort | new nonlinear model to determine cgs and cgd capacities of gaas mesfet |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118052 |
| work_keys_str_mv | AT merabtinen newnonlinearmodeltodeterminecgsandcgdcapacitiesofgaasmesfet AT amouraches newnonlinearmodeltodeterminecgsandcgdcapacitiesofgaasmesfet AT saidiy newnonlinearmodeltodeterminecgsandcgdcapacitiesofgaasmesfet AT zaabatm newnonlinearmodeltodeterminecgsandcgdcapacitiesofgaasmesfet AT kenzaich newnonlinearmodeltodeterminecgsandcgdcapacitiesofgaasmesfet |