New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2003
• Main Authors: Merabtine, N., Amourache, S., Saidi, Y., Zaabat, M., Kenzai, Ch.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118052
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET / N. Merabtine, S. Amourache, Y. Saidi, M. Zaabat, Ch. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 404-410. — Бібліогр.: 11 назв. — англ.

New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. Non linear variations of the bias and gate-source and gate-drain cap...