Atomic defects and physical-chemical properties of PbTe-InTe solid solutions
Crystal-quasichemical equations of probable mechanisms inherent to formation of solid solutions based on lead telluride of the n-type in PbTe-InTe system are offered. Shown is the possibility to satisfactorily explain experimental results by filling with indium atoms In⁺² <--> In⁺¹ In⁺³ (...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2003 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118073 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Atomic defects and physical-chemical properties of PbTe-InTe solid solutions / D.M. Freik, V.I. Boychuk, L.I. Mezhylovsjka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 454-457. — Бібліогр.: 7 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862699638644015104 |
|---|---|
| author | Freik, D.M. Boychuk, V.I. Mezhylovsjka, L.I. |
| author_facet | Freik, D.M. Boychuk, V.I. Mezhylovsjka, L.I. |
| citation_txt | Atomic defects and physical-chemical properties of PbTe-InTe solid solutions / D.M. Freik, V.I. Boychuk, L.I. Mezhylovsjka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 454-457. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Crystal-quasichemical equations of probable mechanisms inherent to formation of solid solutions based on lead telluride of the n-type in PbTe-InTe system are offered. Shown is the possibility to satisfactorily explain experimental results by filling with indium atoms In⁺² <--> In⁺¹ In⁺³ (up to 3 mol. % InTe) octahedral hollows (IH) of close-packed arrangement of tellurium atoms in PbTe crystal lattice. At the greater content of indium telluride, the allocation of both In⁺¹ on OH, and In⁺³ on tetrahedral hollows (TH), accordingly, takes place.
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| first_indexed | 2025-12-07T16:36:24Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118073 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:36:24Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Freik, D.M. Boychuk, V.I. Mezhylovsjka, L.I. 2017-05-28T16:33:02Z 2017-05-28T16:33:02Z 2003 Atomic defects and physical-chemical properties of PbTe-InTe solid solutions / D.M. Freik, V.I. Boychuk, L.I. Mezhylovsjka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 454-457. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 64.90+b https://nasplib.isofts.kiev.ua/handle/123456789/118073 Crystal-quasichemical equations of probable mechanisms inherent to formation of solid solutions based on lead telluride of the n-type in PbTe-InTe system are offered. Shown is the possibility to satisfactorily explain experimental results by filling with indium atoms In⁺² <--> In⁺¹ In⁺³ (up to 3 mol. % InTe) octahedral hollows (IH) of close-packed arrangement of tellurium atoms in PbTe crystal lattice. At the greater content of indium telluride, the allocation of both In⁺¹ on OH, and In⁺³ on tetrahedral hollows (TH), accordingly, takes place. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Atomic defects and physical-chemical properties of PbTe-InTe solid solutions Article published earlier |
| spellingShingle | Atomic defects and physical-chemical properties of PbTe-InTe solid solutions Freik, D.M. Boychuk, V.I. Mezhylovsjka, L.I. |
| title | Atomic defects and physical-chemical properties of PbTe-InTe solid solutions |
| title_full | Atomic defects and physical-chemical properties of PbTe-InTe solid solutions |
| title_fullStr | Atomic defects and physical-chemical properties of PbTe-InTe solid solutions |
| title_full_unstemmed | Atomic defects and physical-chemical properties of PbTe-InTe solid solutions |
| title_short | Atomic defects and physical-chemical properties of PbTe-InTe solid solutions |
| title_sort | atomic defects and physical-chemical properties of pbte-inte solid solutions |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118073 |
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