Atomic defects and physical-chemical properties of PbTe-InTe solid solutions
Crystal-quasichemical equations of probable mechanisms inherent to formation of solid solutions based on lead telluride of the n-type in PbTe-InTe system are offered. Shown is the possibility to satisfactorily explain experimental results by filling with indium atoms In⁺² <--> In⁺¹ In⁺³ (up t...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2003 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118073 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Atomic defects and physical-chemical properties of PbTe-InTe solid solutions / D.M. Freik, V.I. Boychuk, L.I. Mezhylovsjka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 454-457. — Бібліогр.: 7 назв. — англ. |
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Freik, D.M. Boychuk, V.I. Mezhylovsjka, L.I. 2017-05-28T16:33:02Z 2017-05-28T16:33:02Z 2003 Atomic defects and physical-chemical properties of PbTe-InTe solid solutions / D.M. Freik, V.I. Boychuk, L.I. Mezhylovsjka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 454-457. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 64.90+b https://nasplib.isofts.kiev.ua/handle/123456789/118073 Crystal-quasichemical equations of probable mechanisms inherent to formation of solid solutions based on lead telluride of the n-type in PbTe-InTe system are offered. Shown is the possibility to satisfactorily explain experimental results by filling with indium atoms In⁺² <--> In⁺¹ In⁺³ (up to 3 mol. % InTe) octahedral hollows (IH) of close-packed arrangement of tellurium atoms in PbTe crystal lattice. At the greater content of indium telluride, the allocation of both In⁺¹ on OH, and In⁺³ on tetrahedral hollows (TH), accordingly, takes place. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Atomic defects and physical-chemical properties of PbTe-InTe solid solutions Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Atomic defects and physical-chemical properties of PbTe-InTe solid solutions |
| spellingShingle |
Atomic defects and physical-chemical properties of PbTe-InTe solid solutions Freik, D.M. Boychuk, V.I. Mezhylovsjka, L.I. |
| title_short |
Atomic defects and physical-chemical properties of PbTe-InTe solid solutions |
| title_full |
Atomic defects and physical-chemical properties of PbTe-InTe solid solutions |
| title_fullStr |
Atomic defects and physical-chemical properties of PbTe-InTe solid solutions |
| title_full_unstemmed |
Atomic defects and physical-chemical properties of PbTe-InTe solid solutions |
| title_sort |
atomic defects and physical-chemical properties of pbte-inte solid solutions |
| author |
Freik, D.M. Boychuk, V.I. Mezhylovsjka, L.I. |
| author_facet |
Freik, D.M. Boychuk, V.I. Mezhylovsjka, L.I. |
| publishDate |
2003 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Crystal-quasichemical equations of probable mechanisms inherent to formation of solid solutions based on lead telluride of the n-type in PbTe-InTe system are offered. Shown is the possibility to satisfactorily explain experimental results by filling with indium atoms In⁺² <--> In⁺¹ In⁺³ (up to 3 mol. % InTe) octahedral hollows (IH) of close-packed arrangement of tellurium atoms in PbTe crystal lattice. At the greater content of indium telluride, the allocation of both In⁺¹ on OH, and In⁺³ on tetrahedral hollows (TH), accordingly, takes place.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118073 |
| citation_txt |
Atomic defects and physical-chemical properties of PbTe-InTe solid solutions / D.M. Freik, V.I. Boychuk, L.I. Mezhylovsjka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 454-457. — Бібліогр.: 7 назв. — англ. |
| work_keys_str_mv |
AT freikdm atomicdefectsandphysicalchemicalpropertiesofpbteintesolidsolutions AT boychukvi atomicdefectsandphysicalchemicalpropertiesofpbteintesolidsolutions AT mezhylovsjkali atomicdefectsandphysicalchemicalpropertiesofpbteintesolidsolutions |
| first_indexed |
2025-12-07T16:36:24Z |
| last_indexed |
2025-12-07T16:36:24Z |
| _version_ |
1850868115279183872 |