Atomic defects and physical-chemical properties of PbTe-InTe solid solutions

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2003
• Main Authors: Freik, D.M., Boychuk, V.I., Mezhylovsjka, L.I.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118073
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Atomic defects and physical-chemical properties of PbTe-InTe solid solutions / D.M. Freik, V.I. Boychuk, L.I. Mezhylovsjka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 454-457. — Бібліогр.: 7 назв. — англ.

Crystal-quasichemical equations of probable mechanisms inherent to formation of solid solutions based on lead telluride of the n-type in PbTe-InTe system are offered. Shown is the possibility to satisfactorily explain experimental results by filling with indium atoms In⁺² <--> In⁺¹ In⁺³ (...