Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions
Voltage-current characteristics forwardly biased heterojunctions p-GaSe-n-InSe made by the method of optical contact are analyzed. Asit was ascertained, the forward current is determined by tunnel-recombination processes at low voltages and overbarrier emission. The experimental characteristics are...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2003 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118074 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions / Z.D. Kovalyuk, V.P. Makhniy, O.I. Yanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 458-460. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862626584617287680 |
|---|---|
| author | Kovalyuk, Z.D. Makhniy, V.P. Yanchuk, O.I. |
| author_facet | Kovalyuk, Z.D. Makhniy, V.P. Yanchuk, O.I. |
| citation_txt | Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions / Z.D. Kovalyuk, V.P. Makhniy, O.I. Yanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 458-460. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Voltage-current characteristics forwardly biased heterojunctions p-GaSe-n-InSe made by the method of optical contact are analyzed. Asit was ascertained, the forward current is determined by tunnel-recombination processes at low voltages and overbarrier emission. The experimental characteristics are defined by the known theoretical expressions for anisotipical heterojunctions with the energy diagram by Andersen.
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| first_indexed | 2025-12-07T13:37:43Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118074 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T13:37:43Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kovalyuk, Z.D. Makhniy, V.P. Yanchuk, O.I. 2017-05-28T16:33:33Z 2017-05-28T16:33:33Z 2003 Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions / Z.D. Kovalyuk, V.P. Makhniy, O.I. Yanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 458-460. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 73.40.-c https://nasplib.isofts.kiev.ua/handle/123456789/118074 Voltage-current characteristics forwardly biased heterojunctions p-GaSe-n-InSe made by the method of optical contact are analyzed. Asit was ascertained, the forward current is determined by tunnel-recombination processes at low voltages and overbarrier emission. The experimental characteristics are defined by the known theoretical expressions for anisotipical heterojunctions with the energy diagram by Andersen. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions Article published earlier |
| spellingShingle | Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions Kovalyuk, Z.D. Makhniy, V.P. Yanchuk, O.I. |
| title | Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions |
| title_full | Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions |
| title_fullStr | Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions |
| title_full_unstemmed | Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions |
| title_short | Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions |
| title_sort | mechanisms of forward current transport in p-gase-n-inse heterojunctions |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118074 |
| work_keys_str_mv | AT kovalyukzd mechanismsofforwardcurrenttransportinpgaseninseheterojunctions AT makhniyvp mechanismsofforwardcurrenttransportinpgaseninseheterojunctions AT yanchukoi mechanismsofforwardcurrenttransportinpgaseninseheterojunctions |