Unipolar injection currents in Bi₄Ge₃O₁₂ crystals
Current-voltage characteristics of bismuth orthogermanate (Bi₄Ge₃O₁₂) single crystals have been measured at different temperatures under conditions of unipolar injection of charge carriers. It has been found that conduction is characterized by the existence of two channels of the percolation. The te...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2003 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118075 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Unipolar injection currents in Bi₄Ge₃O₁₂ crystals / T.M. Bochkova, S.N. Plyaka, G.Ch. Sokolyanskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 461-464. — Бібліогр.: 23 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862737516353814528 |
|---|---|
| author | Bochkova, T.M. Plyaka, S.N. Sokolyanskii, G.Ch. |
| author_facet | Bochkova, T.M. Plyaka, S.N. Sokolyanskii, G.Ch. |
| citation_txt | Unipolar injection currents in Bi₄Ge₃O₁₂ crystals / T.M. Bochkova, S.N. Plyaka, G.Ch. Sokolyanskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 461-464. — Бібліогр.: 23 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Current-voltage characteristics of bismuth orthogermanate (Bi₄Ge₃O₁₂) single crystals have been measured at different temperatures under conditions of unipolar injection of charge carriers. It has been found that conduction is characterized by the existence of two channels of the percolation. The temperature dependencies of the conductivity, mobility and concentration of the electrons and holes are considered. The obtained results are discussed in terms of hopping transport model of charge carriers in doped heavily compensated semiconductors.
|
| first_indexed | 2025-12-07T20:00:01Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118075 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:00:01Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Bochkova, T.M. Plyaka, S.N. Sokolyanskii, G.Ch. 2017-05-28T16:34:17Z 2017-05-28T16:34:17Z 2003 Unipolar injection currents in Bi₄Ge₃O₁₂ crystals / T.M. Bochkova, S.N. Plyaka, G.Ch. Sokolyanskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 461-464. — Бібліогр.: 23 назв. — англ. 1560-8034 PACS: 72.20 Iv https://nasplib.isofts.kiev.ua/handle/123456789/118075 Current-voltage characteristics of bismuth orthogermanate (Bi₄Ge₃O₁₂) single crystals have been measured at different temperatures under conditions of unipolar injection of charge carriers. It has been found that conduction is characterized by the existence of two channels of the percolation. The temperature dependencies of the conductivity, mobility and concentration of the electrons and holes are considered. The obtained results are discussed in terms of hopping transport model of charge carriers in doped heavily compensated semiconductors. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Unipolar injection currents in Bi₄Ge₃O₁₂ crystals Article published earlier |
| spellingShingle | Unipolar injection currents in Bi₄Ge₃O₁₂ crystals Bochkova, T.M. Plyaka, S.N. Sokolyanskii, G.Ch. |
| title | Unipolar injection currents in Bi₄Ge₃O₁₂ crystals |
| title_full | Unipolar injection currents in Bi₄Ge₃O₁₂ crystals |
| title_fullStr | Unipolar injection currents in Bi₄Ge₃O₁₂ crystals |
| title_full_unstemmed | Unipolar injection currents in Bi₄Ge₃O₁₂ crystals |
| title_short | Unipolar injection currents in Bi₄Ge₃O₁₂ crystals |
| title_sort | unipolar injection currents in bi₄ge₃o₁₂ crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118075 |
| work_keys_str_mv | AT bochkovatm unipolarinjectioncurrentsinbi4ge3o12crystals AT plyakasn unipolarinjectioncurrentsinbi4ge3o12crystals AT sokolyanskiigch unipolarinjectioncurrentsinbi4ge3o12crystals |