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Unipolar injection currents in Bi₄Ge₃O₁₂ crystals

Current-voltage characteristics of bismuth orthogermanate (Bi₄Ge₃O₁₂) single crystals have been measured at different temperatures under conditions of unipolar injection of charge carriers. It has been found that conduction is characterized by the existence of two channels of the percolation. The te...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2003
Main Authors: Bochkova, T.M., Plyaka, S.N., Sokolyanskii, G.Ch.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118075
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Unipolar injection currents in Bi₄Ge₃O₁₂ crystals / T.M. Bochkova, S.N. Plyaka, G.Ch. Sokolyanskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 461-464. — Бібліогр.: 23 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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