Stress-induced effects in light scattering by plasmons in p-type germanium
Infrared light scattering by plasmons in p-Ge has been studied under uniaxial stress along the [110] axis with polarization of incident light parallel to the stress direction. It is found that the deformation of the crystal results in an increase of the plasma frequency and lowering the asymmetry of...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2003 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118080 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Stress-induced effects in light scattering by plasmons in p-type germanium / V.N. Poroshin, A.V. Gaydar, A.A. Abramov, V.N. Tulupenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 425-430. — Бібліогр.: 19 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862695035514912768 |
|---|---|
| author | Poroshin, V.N. Gaydar, A.V. Abramov, A.A. Tulupenko, V.N. |
| author_facet | Poroshin, V.N. Gaydar, A.V. Abramov, A.A. Tulupenko, V.N. |
| citation_txt | Stress-induced effects in light scattering by plasmons in p-type germanium / V.N. Poroshin, A.V. Gaydar, A.A. Abramov, V.N. Tulupenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 425-430. — Бібліогр.: 19 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Infrared light scattering by plasmons in p-Ge has been studied under uniaxial stress along the [110] axis with polarization of incident light parallel to the stress direction. It is found that the deformation of the crystal results in an increase of the plasma frequency and lowering the asymmetry of the line by plasma scattering. These effects are explained by taking into account the change of contribution to the dielectric constant caused by the intra- and intersubband transitions as a consequence of variation of the energy band of p-Ge related with deformation.
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| first_indexed | 2025-12-07T16:23:51Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118080 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:23:51Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Poroshin, V.N. Gaydar, A.V. Abramov, A.A. Tulupenko, V.N. 2017-05-28T16:38:46Z 2017-05-28T16:38:46Z 2003 Stress-induced effects in light scattering by plasmons in p-type germanium / V.N. Poroshin, A.V. Gaydar, A.A. Abramov, V.N. Tulupenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 425-430. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS: 78.40. Fy, 73.20. Mf https://nasplib.isofts.kiev.ua/handle/123456789/118080 Infrared light scattering by plasmons in p-Ge has been studied under uniaxial stress along the [110] axis with polarization of incident light parallel to the stress direction. It is found that the deformation of the crystal results in an increase of the plasma frequency and lowering the asymmetry of the line by plasma scattering. These effects are explained by taking into account the change of contribution to the dielectric constant caused by the intra- and intersubband transitions as a consequence of variation of the energy band of p-Ge related with deformation. The authors are grateful to F.T. Vasko and O.G. Sarbey
 for the discussion of results and to V.M. Vasetski for
 his assistance in carrying out the experiments. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Stress-induced effects in light scattering by plasmons in p-type germanium Article published earlier |
| spellingShingle | Stress-induced effects in light scattering by plasmons in p-type germanium Poroshin, V.N. Gaydar, A.V. Abramov, A.A. Tulupenko, V.N. |
| title | Stress-induced effects in light scattering by plasmons in p-type germanium |
| title_full | Stress-induced effects in light scattering by plasmons in p-type germanium |
| title_fullStr | Stress-induced effects in light scattering by plasmons in p-type germanium |
| title_full_unstemmed | Stress-induced effects in light scattering by plasmons in p-type germanium |
| title_short | Stress-induced effects in light scattering by plasmons in p-type germanium |
| title_sort | stress-induced effects in light scattering by plasmons in p-type germanium |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118080 |
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