Stress-induced effects in light scattering by plasmons in p-type germanium
Infrared light scattering by plasmons in p-Ge has been studied under uniaxial stress along the [110] axis with polarization of incident light parallel to the stress direction. It is found that the deformation of the crystal results in an increase of the plasma frequency and lowering the asymmetry of...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2003 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118080 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Stress-induced effects in light scattering by plasmons in p-type germanium / V.N. Poroshin, A.V. Gaydar, A.A. Abramov, V.N. Tulupenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 425-430. — Бібліогр.: 19 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118080 |
|---|---|
| record_format |
dspace |
| spelling |
Poroshin, V.N. Gaydar, A.V. Abramov, A.A. Tulupenko, V.N. 2017-05-28T16:38:46Z 2017-05-28T16:38:46Z 2003 Stress-induced effects in light scattering by plasmons in p-type germanium / V.N. Poroshin, A.V. Gaydar, A.A. Abramov, V.N. Tulupenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 425-430. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS: 78.40. Fy, 73.20. Mf https://nasplib.isofts.kiev.ua/handle/123456789/118080 Infrared light scattering by plasmons in p-Ge has been studied under uniaxial stress along the [110] axis with polarization of incident light parallel to the stress direction. It is found that the deformation of the crystal results in an increase of the plasma frequency and lowering the asymmetry of the line by plasma scattering. These effects are explained by taking into account the change of contribution to the dielectric constant caused by the intra- and intersubband transitions as a consequence of variation of the energy band of p-Ge related with deformation. The authors are grateful to F.T. Vasko and O.G. Sarbey for the discussion of results and to V.M. Vasetski for his assistance in carrying out the experiments. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Stress-induced effects in light scattering by plasmons in p-type germanium Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Stress-induced effects in light scattering by plasmons in p-type germanium |
| spellingShingle |
Stress-induced effects in light scattering by plasmons in p-type germanium Poroshin, V.N. Gaydar, A.V. Abramov, A.A. Tulupenko, V.N. |
| title_short |
Stress-induced effects in light scattering by plasmons in p-type germanium |
| title_full |
Stress-induced effects in light scattering by plasmons in p-type germanium |
| title_fullStr |
Stress-induced effects in light scattering by plasmons in p-type germanium |
| title_full_unstemmed |
Stress-induced effects in light scattering by plasmons in p-type germanium |
| title_sort |
stress-induced effects in light scattering by plasmons in p-type germanium |
| author |
Poroshin, V.N. Gaydar, A.V. Abramov, A.A. Tulupenko, V.N. |
| author_facet |
Poroshin, V.N. Gaydar, A.V. Abramov, A.A. Tulupenko, V.N. |
| publishDate |
2003 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Infrared light scattering by plasmons in p-Ge has been studied under uniaxial stress along the [110] axis with polarization of incident light parallel to the stress direction. It is found that the deformation of the crystal results in an increase of the plasma frequency and lowering the asymmetry of the line by plasma scattering. These effects are explained by taking into account the change of contribution to the dielectric constant caused by the intra- and intersubband transitions as a consequence of variation of the energy band of p-Ge related with deformation.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118080 |
| citation_txt |
Stress-induced effects in light scattering by plasmons in p-type germanium / V.N. Poroshin, A.V. Gaydar, A.A. Abramov, V.N. Tulupenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 425-430. — Бібліогр.: 19 назв. — англ. |
| work_keys_str_mv |
AT poroshinvn stressinducedeffectsinlightscatteringbyplasmonsinptypegermanium AT gaydarav stressinducedeffectsinlightscatteringbyplasmonsinptypegermanium AT abramovaa stressinducedeffectsinlightscatteringbyplasmonsinptypegermanium AT tulupenkovn stressinducedeffectsinlightscatteringbyplasmonsinptypegermanium |
| first_indexed |
2025-12-07T16:23:51Z |
| last_indexed |
2025-12-07T16:23:51Z |
| _version_ |
1850867326135566336 |