Stress-induced effects in light scattering by plasmons in p-type germanium

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2003
• Автори: Poroshin, V.N., Gaydar, A.V., Abramov, A.A., Tulupenko, V.N.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118080
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Stress-induced effects in light scattering by plasmons in p-type germanium / V.N. Poroshin, A.V. Gaydar, A.A. Abramov, V.N. Tulupenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 425-430. — Бібліогр.: 19 назв. — англ.

Infrared light scattering by plasmons in p-Ge has been studied under uniaxial stress along the [110] axis with polarization of incident light parallel to the stress direction. It is found that the deformation of the crystal results in an increase of the plasma frequency and lowering the asymmetry of...