Classification of microdefects in semiconducting silicon
On the basis of experimental analysis (preferential etching, transmission electron microscopy) of the dislocation-free silicon single crystals grown by floating-zone method (FZ-Si) and Czochralski method (Cz-Si), a classification of grown-in microdefects was compiled. The suggested classification is...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2003 |
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| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118081 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Classification of microdefects in semiconducting silicon / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 431-436. — Бібліогр.: 40 назв. — англ. |
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Talanin, V.I. Talanin, I.E. 2017-05-28T16:39:55Z 2017-05-28T16:39:55Z 2003 Classification of microdefects in semiconducting silicon / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 431-436. — Бібліогр.: 40 назв. — англ. 1560-8034 PACS: 61.72.Bb; 61.72.Ji; 61.72.Yx https://nasplib.isofts.kiev.ua/handle/123456789/118081 On the basis of experimental analysis (preferential etching, transmission electron microscopy) of the dislocation-free silicon single crystals grown by floating-zone method (FZ-Si) and Czochralski method (Cz-Si), a classification of grown-in microdefects was compiled. The suggested classification is founded on the heterogeneous formation mechanism of grown-in microdefects, which was justified earlier by us. The suggested classification is valid for crystals of either small or large diameter. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Classification of microdefects in semiconducting silicon Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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| title |
Classification of microdefects in semiconducting silicon |
| spellingShingle |
Classification of microdefects in semiconducting silicon Talanin, V.I. Talanin, I.E. |
| title_short |
Classification of microdefects in semiconducting silicon |
| title_full |
Classification of microdefects in semiconducting silicon |
| title_fullStr |
Classification of microdefects in semiconducting silicon |
| title_full_unstemmed |
Classification of microdefects in semiconducting silicon |
| title_sort |
classification of microdefects in semiconducting silicon |
| author |
Talanin, V.I. Talanin, I.E. |
| author_facet |
Talanin, V.I. Talanin, I.E. |
| publishDate |
2003 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
On the basis of experimental analysis (preferential etching, transmission electron microscopy) of the dislocation-free silicon single crystals grown by floating-zone method (FZ-Si) and Czochralski method (Cz-Si), a classification of grown-in microdefects was compiled. The suggested classification is founded on the heterogeneous formation mechanism of grown-in microdefects, which was justified earlier by us. The suggested classification is valid for crystals of either small or large diameter.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118081 |
| citation_txt |
Classification of microdefects in semiconducting silicon / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 431-436. — Бібліогр.: 40 назв. — англ. |
| work_keys_str_mv |
AT talaninvi classificationofmicrodefectsinsemiconductingsilicon AT talaninie classificationofmicrodefectsinsemiconductingsilicon |
| first_indexed |
2025-12-07T20:47:26Z |
| last_indexed |
2025-12-07T20:47:26Z |
| _version_ |
1850883909222400000 |