Metastable interstitials in CdSe and CdS crystals
An "anomalous" defect drift in external electric field, namely, transport of acceptorlike centres from the anode to the cathode, has been observed in CdS:Cu, CdS:Ag and nominally undoped CdSe crystals at 350-700 K. The effect is accounted for by transformation of acceptors into donors unde...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2003 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118082 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Metastable interstitials in CdSe and CdS crystals / L.V. Borkovska, B.M. Bulakh, L.Yu. Khomenkova, N.O. Korsunska, I.V. Markevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 437-440. — Бібліогр.: 14 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862559026615681024 |
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| author | Borkovska, L.V. Bulakh, B.M. Khomenkova, L.Yu. Korsunska, N.O. Markevich, I.V. |
| author_facet | Borkovska, L.V. Bulakh, B.M. Khomenkova, L.Yu. Korsunska, N.O. Markevich, I.V. |
| citation_txt | Metastable interstitials in CdSe and CdS crystals / L.V. Borkovska, B.M. Bulakh, L.Yu. Khomenkova, N.O. Korsunska, I.V. Markevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 437-440. — Бібліогр.: 14 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | An "anomalous" defect drift in external electric field, namely, transport of acceptorlike centres from the anode to the cathode, has been observed in CdS:Cu, CdS:Ag and nominally undoped CdSe crystals at 350-700 K. The effect is accounted for by transformation of acceptors into donors under heating. The donors are metastable centres that do not display themselves in the equilibrium state and can be revealed only by drift in electric field. The acceptors are shown to be substitutional impurity atoms, acceptor-to-donor transformation occurring due to transition of these atoms from lattice sites to interstitials. Under cooling reverse donor-to-acceptor transition takes place.
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| first_indexed | 2025-11-25T22:54:33Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-118082 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T22:54:33Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Borkovska, L.V. Bulakh, B.M. Khomenkova, L.Yu. Korsunska, N.O. Markevich, I.V. 2017-05-28T16:40:49Z 2017-05-28T16:40:49Z 2003 Metastable interstitials in CdSe and CdS crystals / L.V. Borkovska, B.M. Bulakh, L.Yu. Khomenkova, N.O. Korsunska, I.V. Markevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 437-440. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 61.72 Ji; 66.30 Jt; 66.30 Qa https://nasplib.isofts.kiev.ua/handle/123456789/118082 An "anomalous" defect drift in external electric field, namely, transport of acceptorlike centres from the anode to the cathode, has been observed in CdS:Cu, CdS:Ag and nominally undoped CdSe crystals at 350-700 K. The effect is accounted for by transformation of acceptors into donors under heating. The donors are metastable centres that do not display themselves in the equilibrium state and can be revealed only by drift in electric field. The acceptors are shown to be substitutional impurity atoms, acceptor-to-donor transformation occurring due to transition of these atoms from lattice sites to interstitials. Under cooling reverse donor-to-acceptor transition takes place. This work was supported bу National Academу of Sciences of Ukraine, and one author (L.Yu.K.) were supported bу Grant of the President of Ukraine for уoung scientists. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Metastable interstitials in CdSe and CdS crystals Article published earlier |
| spellingShingle | Metastable interstitials in CdSe and CdS crystals Borkovska, L.V. Bulakh, B.M. Khomenkova, L.Yu. Korsunska, N.O. Markevich, I.V. |
| title | Metastable interstitials in CdSe and CdS crystals |
| title_full | Metastable interstitials in CdSe and CdS crystals |
| title_fullStr | Metastable interstitials in CdSe and CdS crystals |
| title_full_unstemmed | Metastable interstitials in CdSe and CdS crystals |
| title_short | Metastable interstitials in CdSe and CdS crystals |
| title_sort | metastable interstitials in cdse and cds crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118082 |
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