On the origin of 300 K near-band-edge luminescence in CdTe
A careful analysis of 300 K near-band-edge luminescence from bulk CdTe and cadmium telluride films is made. It is shown that: (i) the observed difference in 300 K peak positions of the near-band-edge luminescence hvm in CdTe crystals and films, and (ii) the hvm shift to lower energies as the excitat...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2003 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118083 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | On the origin of 300 K near-band-edge luminescence in CdTe / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 441-443. — Бібліогр.: 14 назв. — англ. |
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Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. 2017-05-28T16:41:27Z 2017-05-28T16:41:27Z 2003 On the origin of 300 K near-band-edge luminescence in CdTe / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 441-443. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 78.55.-m ; 78.55. Et https://nasplib.isofts.kiev.ua/handle/123456789/118083 A careful analysis of 300 K near-band-edge luminescence from bulk CdTe and cadmium telluride films is made. It is shown that: (i) the observed difference in 300 K peak positions of the near-band-edge luminescence hvm in CdTe crystals and films, and (ii) the hvm shift to lower energies as the excitation intensity is increased, could not be satisfactory explained by an assumption that free excitons dominate in the formation of the above luminescence. So, the origin of 300 K near-band-edge luminescence in CdTe is not mainly the free exciton one as was proposed earlier, and needs further examination. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics On the origin of 300 K near-band-edge luminescence in CdTe Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
On the origin of 300 K near-band-edge luminescence in CdTe |
| spellingShingle |
On the origin of 300 K near-band-edge luminescence in CdTe Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. |
| title_short |
On the origin of 300 K near-band-edge luminescence in CdTe |
| title_full |
On the origin of 300 K near-band-edge luminescence in CdTe |
| title_fullStr |
On the origin of 300 K near-band-edge luminescence in CdTe |
| title_full_unstemmed |
On the origin of 300 K near-band-edge luminescence in CdTe |
| title_sort |
on the origin of 300 k near-band-edge luminescence in cdte |
| author |
Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. |
| author_facet |
Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. |
| publishDate |
2003 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
A careful analysis of 300 K near-band-edge luminescence from bulk CdTe and cadmium telluride films is made. It is shown that: (i) the observed difference in 300 K peak positions of the near-band-edge luminescence hvm in CdTe crystals and films, and (ii) the hvm shift to lower energies as the excitation intensity is increased, could not be satisfactory explained by an assumption that free excitons dominate in the formation of the above luminescence. So, the origin of 300 K near-band-edge luminescence in CdTe is not mainly the free exciton one as was proposed earlier, and needs further examination.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118083 |
| citation_txt |
On the origin of 300 K near-band-edge luminescence in CdTe / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 441-443. — Бібліогр.: 14 назв. — англ. |
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2025-12-07T16:54:37Z |
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2025-12-07T16:54:37Z |
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