Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures
The effects of microwave (2.45 GHz) treatment influence on the cross section for electron capture and the energy of the deep levels in the forbidden gap of GaAs monocrystals and n-n⁺ epitaxial structures have been investigated using acoustoelectric transient spectroscopy.
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2003 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118085 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures / O.Ya. Olikh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 450-453. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118085 |
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Olikh, O.Ya. 2017-05-28T16:43:00Z 2017-05-28T16:43:00Z 2003 Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures / O.Ya. Olikh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 450-453. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 72.50.+b https://nasplib.isofts.kiev.ua/handle/123456789/118085 The effects of microwave (2.45 GHz) treatment influence on the cross section for electron capture and the energy of the deep levels in the forbidden gap of GaAs monocrystals and n-n⁺ epitaxial structures have been investigated using acoustoelectric transient spectroscopy. The author would like to thank Prof. R.V. Konakova for helpful discussions. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures |
| spellingShingle |
Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures Olikh, O.Ya. |
| title_short |
Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures |
| title_full |
Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures |
| title_fullStr |
Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures |
| title_full_unstemmed |
Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures |
| title_sort |
acoustoelectric transient spectroscopy of microwave treated gaas-based structures |
| author |
Olikh, O.Ya. |
| author_facet |
Olikh, O.Ya. |
| publishDate |
2003 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The effects of microwave (2.45 GHz) treatment influence on the cross section for electron capture and the energy of the deep levels in the forbidden gap of GaAs monocrystals and n-n⁺ epitaxial structures have been investigated using acoustoelectric transient spectroscopy.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118085 |
| citation_txt |
Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures / O.Ya. Olikh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 450-453. — Бібліогр.: 14 назв. — англ. |
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AT olikhoya acoustoelectrictransientspectroscopyofmicrowavetreatedgaasbasedstructures |
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2025-12-07T18:21:32Z |
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2025-12-07T18:21:32Z |
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