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Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures

The effects of microwave (2.45 GHz) treatment influence on the cross section for electron capture and the energy of the deep levels in the forbidden gap of GaAs monocrystals and n-n⁺ epitaxial structures have been investigated using acoustoelectric transient spectroscopy.

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2003
ISSN:1560-8034
Main Author: Olikh, O.Ya.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118085
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures / O.Ya. Olikh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 450-453. — Бібліогр.: 14 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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