Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells
The investigations of multilayer nano-scale systems contained one or two quantum wells are carried out by double-crystal X-ray diffractometry. Processes of interdiffusion of In, Ga atoms and their influence on properties of such systems are considered. The content of nitrogen in quantum wells and bu...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2003 |
| Автори: | , , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118086 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells / I.M. Fodchuk, V.B. Gevyk, O.G. Gimchinsky, E.N. Kislovskii, O.P. Kroytor, V.B. Molodkin, S.I. Olihovskii, E.M. Pavelescu, M. Pessa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 479-486. — Бібліогр.: 23 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862605591913955328 |
|---|---|
| author | Fodchuk, I.M. Gevyk, V.B. Gimchinsky, O.G. Kislovskii, E.N. Kroytor, O.P. Molodkin, V.B. Olihovskii, S.I. Pavelescu, E.M. Pessa, M. |
| author_facet | Fodchuk, I.M. Gevyk, V.B. Gimchinsky, O.G. Kislovskii, E.N. Kroytor, O.P. Molodkin, V.B. Olihovskii, S.I. Pavelescu, E.M. Pessa, M. |
| citation_txt | Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells / I.M. Fodchuk, V.B. Gevyk, O.G. Gimchinsky, E.N. Kislovskii, O.P. Kroytor, V.B. Molodkin, S.I. Olihovskii, E.M. Pavelescu, M. Pessa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 479-486. — Бібліогр.: 23 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The investigations of multilayer nano-scale systems contained one or two quantum wells are carried out by double-crystal X-ray diffractometry. Processes of interdiffusion of In, Ga atoms and their influence on properties of such systems are considered. The content of nitrogen in quantum wells and buffer layers are defined. It is determined that InxGa₁₋xAs₁₋yNy system has perfect crystalline structure, and interface between layers is coherent.
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| first_indexed | 2025-11-28T10:53:19Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118086 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-28T10:53:19Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Fodchuk, I.M. Gevyk, V.B. Gimchinsky, O.G. Kislovskii, E.N. Kroytor, O.P. Molodkin, V.B. Olihovskii, S.I. Pavelescu, E.M. Pessa, M. 2017-05-28T16:43:41Z 2017-05-28T16:43:41Z 2003 Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells / I.M. Fodchuk, V.B. Gevyk, O.G. Gimchinsky, E.N. Kislovskii, O.P. Kroytor, V.B. Molodkin, S.I. Olihovskii, E.M. Pavelescu, M. Pessa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 479-486. — Бібліогр.: 23 назв. — англ. 1560-8034 PACS: 68.65.Fg https://nasplib.isofts.kiev.ua/handle/123456789/118086 The investigations of multilayer nano-scale systems contained one or two quantum wells are carried out by double-crystal X-ray diffractometry. Processes of interdiffusion of In, Ga atoms and their influence on properties of such systems are considered. The content of nitrogen in quantum wells and buffer layers are defined. It is determined that InxGa₁₋xAs₁₋yNy system has perfect crystalline structure, and interface between layers is coherent. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells Article published earlier |
| spellingShingle | Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells Fodchuk, I.M. Gevyk, V.B. Gimchinsky, O.G. Kislovskii, E.N. Kroytor, O.P. Molodkin, V.B. Olihovskii, S.I. Pavelescu, E.M. Pessa, M. |
| title | Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells |
| title_full | Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells |
| title_fullStr | Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells |
| title_full_unstemmed | Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells |
| title_short | Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells |
| title_sort | structural changes in multilayer systems containing inxga₁₋xas₁₋yny quantum wells |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118086 |
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