Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells

Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells

The investigations of multilayer nano-scale systems contained one or two quantum wells are carried out by double-crystal X-ray diffractometry. Processes of interdiffusion of In, Ga atoms and their influence on properties of such systems are considered. The content of nitrogen in quantum wells and bu...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2003
Hauptverfasser: Fodchuk, I.M., Gevyk, V.B., Gimchinsky, O.G., Kislovskii, E.N., Kroytor, O.P., Molodkin, V.B., Olihovskii, S.I., Pavelescu, E.M., Pessa, M.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118086
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells / I.M. Fodchuk, V.B. Gevyk, O.G. Gimchinsky, E.N. Kislovskii, O.P. Kroytor, V.B. Molodkin, S.I. Olihovskii, E.M. Pavelescu, M. Pessa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 479-486. — Бібліогр.: 23 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118086
record_format dspace
spelling Fodchuk, I.M.
Gevyk, V.B.
Gimchinsky, O.G.
Kislovskii, E.N.
Kroytor, O.P.
Molodkin, V.B.
Olihovskii, S.I.
Pavelescu, E.M.
Pessa, M.
2017-05-28T16:43:41Z
2017-05-28T16:43:41Z
2003
Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells / I.M. Fodchuk, V.B. Gevyk, O.G. Gimchinsky, E.N. Kislovskii, O.P. Kroytor, V.B. Molodkin, S.I. Olihovskii, E.M. Pavelescu, M. Pessa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 479-486. — Бібліогр.: 23 назв. — англ.
1560-8034
PACS: 68.65.Fg
https://nasplib.isofts.kiev.ua/handle/123456789/118086
The investigations of multilayer nano-scale systems contained one or two quantum wells are carried out by double-crystal X-ray diffractometry. Processes of interdiffusion of In, Ga atoms and their influence on properties of such systems are considered. The content of nitrogen in quantum wells and buffer layers are defined. It is determined that InxGa₁₋xAs₁₋yNy system has perfect crystalline structure, and interface between layers is coherent.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells
spellingShingle Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells
Fodchuk, I.M.
Gevyk, V.B.
Gimchinsky, O.G.
Kislovskii, E.N.
Kroytor, O.P.
Molodkin, V.B.
Olihovskii, S.I.
Pavelescu, E.M.
Pessa, M.
title_short Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells
title_full Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells
title_fullStr Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells
title_full_unstemmed Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells
title_sort structural changes in multilayer systems containing inxga₁₋xas₁₋yny quantum wells
author Fodchuk, I.M.
Gevyk, V.B.
Gimchinsky, O.G.
Kislovskii, E.N.
Kroytor, O.P.
Molodkin, V.B.
Olihovskii, S.I.
Pavelescu, E.M.
Pessa, M.
author_facet Fodchuk, I.M.
Gevyk, V.B.
Gimchinsky, O.G.
Kislovskii, E.N.
Kroytor, O.P.
Molodkin, V.B.
Olihovskii, S.I.
Pavelescu, E.M.
Pessa, M.
publishDate 2003
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The investigations of multilayer nano-scale systems contained one or two quantum wells are carried out by double-crystal X-ray diffractometry. Processes of interdiffusion of In, Ga atoms and their influence on properties of such systems are considered. The content of nitrogen in quantum wells and buffer layers are defined. It is determined that InxGa₁₋xAs₁₋yNy system has perfect crystalline structure, and interface between layers is coherent.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118086
citation_txt Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells / I.M. Fodchuk, V.B. Gevyk, O.G. Gimchinsky, E.N. Kislovskii, O.P. Kroytor, V.B. Molodkin, S.I. Olihovskii, E.M. Pavelescu, M. Pessa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 479-486. — Бібліогр.: 23 назв. — англ.
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AT kislovskiien structuralchangesinmultilayersystemscontaininginxga1xas1ynyquantumwells
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first_indexed 2025-11-28T10:53:19Z
last_indexed 2025-11-28T10:53:19Z
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