A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2003
• Автори: Sachenko, A.V., Kryuchenko, Yu.V., Manoilov, E.G., Kaganovich, E.B.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118087
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures / A.V. Sachenko, Yu.V. Kryuchenko, E.G. Manoilov, E.B. Kaganovich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 487-491. — Бібліогр.: 6 назв. — англ.

To understand both multimodal character of stationary photoluminescence (PL) spectra and observed peculiarities in time-resolved PL in low-dimensional Si structures, it is proposed to take into account an additional effect, which has to emerge in such structures due to indirect-bandgap nature of silicon material. The effect implies that the exciton radiative lifetime becomes a nonmonotonous (oscillating) function of the nanocrystal (NC) size. As a result, in the calculated PL spectra the energy distance between PL peaks or PL minima practically determined by the mean NC size, while dispersion in NC sizes plays a minor role. The qualitative agreement between calculated PL spectra and PL spectra observed experimentally in porous silicon and nanocrystalline silicon (nc-Si) films counts in favor of the used model of radiative exciton recombination.