A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures
To understand both multimodal character of stationary photoluminescence (PL) spectra and observed peculiarities in time-resolved PL in low-dimensional Si structures, it is proposed to take into account an additional effect, which has to emerge in such structures due to indirect-bandgap nature of sil...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2003 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118087 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures / A.V. Sachenko, Yu.V. Kryuchenko, E.G. Manoilov, E.B. Kaganovich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 487-491. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862722178717319168 |
|---|---|
| author | Sachenko, A.V. Kryuchenko, Yu.V. Manoilov, E.G. Kaganovich, E.B. |
| author_facet | Sachenko, A.V. Kryuchenko, Yu.V. Manoilov, E.G. Kaganovich, E.B. |
| citation_txt | A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures / A.V. Sachenko, Yu.V. Kryuchenko, E.G. Manoilov, E.B. Kaganovich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 487-491. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | To understand both multimodal character of stationary photoluminescence (PL) spectra and observed peculiarities in time-resolved PL in low-dimensional Si structures, it is proposed to take into account an additional effect, which has to emerge in such structures due to indirect-bandgap nature of silicon material. The effect implies that the exciton radiative lifetime becomes a nonmonotonous (oscillating) function of the nanocrystal (NC) size. As a result, in the calculated PL spectra the energy distance between PL peaks or PL minima practically determined by the mean NC size, while dispersion in NC sizes plays a minor role. The qualitative agreement between calculated PL spectra and PL spectra observed experimentally in porous silicon and nanocrystalline silicon (nc-Si) films counts in favor of the used
model of radiative exciton recombination.
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| first_indexed | 2025-12-07T18:34:48Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118087 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:34:48Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sachenko, A.V. Kryuchenko, Yu.V. Manoilov, E.G. Kaganovich, E.B. 2017-05-28T16:44:15Z 2017-05-28T16:44:15Z 2003 A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures / A.V. Sachenko, Yu.V. Kryuchenko, E.G. Manoilov, E.B. Kaganovich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 487-491. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 73.20.Dx, 78.66.-w https://nasplib.isofts.kiev.ua/handle/123456789/118087 To understand both multimodal character of stationary photoluminescence (PL) spectra and observed peculiarities in time-resolved PL in low-dimensional Si structures, it is proposed to take into account an additional effect, which has to emerge in such structures due to indirect-bandgap nature of silicon material. The effect implies that the exciton radiative lifetime becomes a nonmonotonous (oscillating) function of the nanocrystal (NC) size. As a result, in the calculated PL spectra the energy distance between PL peaks or PL minima practically determined by the mean NC size, while dispersion in NC sizes plays a minor role. The qualitative agreement between calculated PL spectra and PL spectra observed experimentally in porous silicon and nanocrystalline silicon (nc-Si) films counts in favor of the used
 model of radiative exciton recombination. The work was supported bу INTAS grant (INTAS Call 2001 NANO-0444) and State Fundamental Research Foundation of Ukraine. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures Article published earlier |
| spellingShingle | A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures Sachenko, A.V. Kryuchenko, Yu.V. Manoilov, E.G. Kaganovich, E.B. |
| title | A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures |
| title_full | A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures |
| title_fullStr | A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures |
| title_full_unstemmed | A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures |
| title_short | A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures |
| title_sort | fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118087 |
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