A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures

To understand both multimodal character of stationary photoluminescence (PL) spectra and observed peculiarities in time-resolved PL in low-dimensional Si structures, it is proposed to take into account an additional effect, which has to emerge in such structures due to indirect-bandgap nature of sil...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2003
Main Authors: Sachenko, A.V., Kryuchenko, Yu.V., Manoilov, E.G., Kaganovich, E.B.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118087
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures / A.V. Sachenko, Yu.V. Kryuchenko, E.G. Manoilov, E.B. Kaganovich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 487-491. — Бібліогр.: 6 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118087
record_format dspace
spelling Sachenko, A.V.
Kryuchenko, Yu.V.
Manoilov, E.G.
Kaganovich, E.B.
2017-05-28T16:44:15Z
2017-05-28T16:44:15Z
2003
A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures / A.V. Sachenko, Yu.V. Kryuchenko, E.G. Manoilov, E.B. Kaganovich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 487-491. — Бібліогр.: 6 назв. — англ.
1560-8034
PACS: 73.20.Dx, 78.66.-w
https://nasplib.isofts.kiev.ua/handle/123456789/118087
To understand both multimodal character of stationary photoluminescence (PL) spectra and observed peculiarities in time-resolved PL in low-dimensional Si structures, it is proposed to take into account an additional effect, which has to emerge in such structures due to indirect-bandgap nature of silicon material. The effect implies that the exciton radiative lifetime becomes a nonmonotonous (oscillating) function of the nanocrystal (NC) size. As a result, in the calculated PL spectra the energy distance between PL peaks or PL minima practically determined by the mean NC size, while dispersion in NC sizes plays a minor role. The qualitative agreement between calculated PL spectra and PL spectra observed experimentally in porous silicon and nanocrystalline silicon (nc-Si) films counts in favor of the used model of radiative exciton recombination.
The work was supported bу INTAS grant (INTAS Call 2001 NANO-0444) and State Fundamental Research Foundation of Ukraine.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures
spellingShingle A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures
Sachenko, A.V.
Kryuchenko, Yu.V.
Manoilov, E.G.
Kaganovich, E.B.
title_short A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures
title_full A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures
title_fullStr A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures
title_full_unstemmed A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures
title_sort fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures
author Sachenko, A.V.
Kryuchenko, Yu.V.
Manoilov, E.G.
Kaganovich, E.B.
author_facet Sachenko, A.V.
Kryuchenko, Yu.V.
Manoilov, E.G.
Kaganovich, E.B.
publishDate 2003
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description To understand both multimodal character of stationary photoluminescence (PL) spectra and observed peculiarities in time-resolved PL in low-dimensional Si structures, it is proposed to take into account an additional effect, which has to emerge in such structures due to indirect-bandgap nature of silicon material. The effect implies that the exciton radiative lifetime becomes a nonmonotonous (oscillating) function of the nanocrystal (NC) size. As a result, in the calculated PL spectra the energy distance between PL peaks or PL minima practically determined by the mean NC size, while dispersion in NC sizes plays a minor role. The qualitative agreement between calculated PL spectra and PL spectra observed experimentally in porous silicon and nanocrystalline silicon (nc-Si) films counts in favor of the used model of radiative exciton recombination.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118087
citation_txt A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures / A.V. Sachenko, Yu.V. Kryuchenko, E.G. Manoilov, E.B. Kaganovich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 487-491. — Бібліогр.: 6 назв. — англ.
work_keys_str_mv AT sachenkoav afreshapproachtointerpretationofvisiblephotoluminescencespectrainsiliconnanostructures
AT kryuchenkoyuv afreshapproachtointerpretationofvisiblephotoluminescencespectrainsiliconnanostructures
AT manoiloveg afreshapproachtointerpretationofvisiblephotoluminescencespectrainsiliconnanostructures
AT kaganovicheb afreshapproachtointerpretationofvisiblephotoluminescencespectrainsiliconnanostructures
AT sachenkoav freshapproachtointerpretationofvisiblephotoluminescencespectrainsiliconnanostructures
AT kryuchenkoyuv freshapproachtointerpretationofvisiblephotoluminescencespectrainsiliconnanostructures
AT manoiloveg freshapproachtointerpretationofvisiblephotoluminescencespectrainsiliconnanostructures
AT kaganovicheb freshapproachtointerpretationofvisiblephotoluminescencespectrainsiliconnanostructures
first_indexed 2025-12-07T18:34:48Z
last_indexed 2025-12-07T18:34:48Z
_version_ 1850875564328484865