Structure and luminescence study of nanoporous silicon layers with high internal surface
In this work, the technique of formation of homogeneous nanoporous silicon layers with high internal surface on solar cell substrates by stain etching is developed. Emission and structure properties of such layers were studied by photoluminescence (PL), photoluminescence excitation, Auger electronic...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2003 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118088 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Structure and luminescence study of nanoporous silicon layers with high internal surface / V.A. Makara, M.M. Melnichenko, K.V. Svezhentsova, L.Yu. Khomenkova, O.M. Shmyryeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 492-495. — Бібліогр.: 9 назв. — англ. |
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nasplib_isofts_kiev_ua-123456789-118088 |
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Makara, V.A. Melnichenko, M.M. Svezhentsova, K.V. Khomenkova, L.Yu. Shmyryeva, O.M. 2017-05-28T16:44:51Z 2017-05-28T16:44:51Z 2003 Structure and luminescence study of nanoporous silicon layers with high internal surface / V.A. Makara, M.M. Melnichenko, K.V. Svezhentsova, L.Yu. Khomenkova, O.M. Shmyryeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 492-495. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 78.55.Mb, 78.66.Bf https://nasplib.isofts.kiev.ua/handle/123456789/118088 In this work, the technique of formation of homogeneous nanoporous silicon layers with high internal surface on solar cell substrates by stain etching is developed. Emission and structure properties of such layers were studied by photoluminescence (PL), photoluminescence excitation, Auger electronic spectroscopy, atomic force microscopy and scanning tunnel microscopy methods. It was observed that nanoporous layers are of high homogeneity and their thickness is ~20-25 nm. It was shown that the higher PL intensity of such layers in comparison with PL intensity of the layers prepared on standard substrates in the same regimes is connected with the higher internal surface. The increase of PL intensity during prolonged aging in air at the room temperature was observed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Structure and luminescence study of nanoporous silicon layers with high internal surface Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Structure and luminescence study of nanoporous silicon layers with high internal surface |
| spellingShingle |
Structure and luminescence study of nanoporous silicon layers with high internal surface Makara, V.A. Melnichenko, M.M. Svezhentsova, K.V. Khomenkova, L.Yu. Shmyryeva, O.M. |
| title_short |
Structure and luminescence study of nanoporous silicon layers with high internal surface |
| title_full |
Structure and luminescence study of nanoporous silicon layers with high internal surface |
| title_fullStr |
Structure and luminescence study of nanoporous silicon layers with high internal surface |
| title_full_unstemmed |
Structure and luminescence study of nanoporous silicon layers with high internal surface |
| title_sort |
structure and luminescence study of nanoporous silicon layers with high internal surface |
| author |
Makara, V.A. Melnichenko, M.M. Svezhentsova, K.V. Khomenkova, L.Yu. Shmyryeva, O.M. |
| author_facet |
Makara, V.A. Melnichenko, M.M. Svezhentsova, K.V. Khomenkova, L.Yu. Shmyryeva, O.M. |
| publishDate |
2003 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
In this work, the technique of formation of homogeneous nanoporous silicon layers with high internal surface on solar cell substrates by stain etching is developed. Emission and structure properties of such layers were studied by photoluminescence (PL), photoluminescence excitation, Auger electronic spectroscopy, atomic force microscopy and scanning tunnel microscopy methods. It was observed that nanoporous layers are of high homogeneity and their thickness is ~20-25 nm. It was shown that the higher PL intensity of such layers in comparison with PL intensity of the layers prepared on standard substrates in the same regimes is connected with the higher internal surface. The increase of PL intensity during prolonged aging in air at the room temperature was observed.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118088 |
| citation_txt |
Structure and luminescence study of nanoporous silicon layers with high internal surface / V.A. Makara, M.M. Melnichenko, K.V. Svezhentsova, L.Yu. Khomenkova, O.M. Shmyryeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 492-495. — Бібліогр.: 9 назв. — англ. |
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