Structure and luminescence study of nanoporous silicon layers with high internal surface
In this work, the technique of formation of homogeneous nanoporous silicon layers with high internal surface on solar cell substrates by stain etching is developed. Emission and structure properties of such layers were studied by photoluminescence (PL), photoluminescence excitation, Auger electronic...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2003 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118088 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Structure and luminescence study of nanoporous silicon layers with high internal surface / V.A. Makara, M.M. Melnichenko, K.V. Svezhentsova, L.Yu. Khomenkova, O.M. Shmyryeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 492-495. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862709839480750080 |
|---|---|
| author | Makara, V.A. Melnichenko, M.M. Svezhentsova, K.V. Khomenkova, L.Yu. Shmyryeva, O.M. |
| author_facet | Makara, V.A. Melnichenko, M.M. Svezhentsova, K.V. Khomenkova, L.Yu. Shmyryeva, O.M. |
| citation_txt | Structure and luminescence study of nanoporous silicon layers with high internal surface / V.A. Makara, M.M. Melnichenko, K.V. Svezhentsova, L.Yu. Khomenkova, O.M. Shmyryeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 492-495. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this work, the technique of formation of homogeneous nanoporous silicon layers with high internal surface on solar cell substrates by stain etching is developed. Emission and structure properties of such layers were studied by photoluminescence (PL), photoluminescence excitation, Auger electronic spectroscopy, atomic force microscopy and scanning tunnel microscopy methods. It was observed that nanoporous layers are of high homogeneity and their thickness is ~20-25 nm. It was shown that the higher PL intensity of such layers in comparison with PL intensity of the layers prepared on standard substrates in the same regimes is connected with the higher internal surface. The increase of PL intensity during prolonged aging in air at the room temperature was observed.
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| first_indexed | 2025-12-07T17:20:45Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-118088 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:20:45Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Makara, V.A. Melnichenko, M.M. Svezhentsova, K.V. Khomenkova, L.Yu. Shmyryeva, O.M. 2017-05-28T16:44:51Z 2017-05-28T16:44:51Z 2003 Structure and luminescence study of nanoporous silicon layers with high internal surface / V.A. Makara, M.M. Melnichenko, K.V. Svezhentsova, L.Yu. Khomenkova, O.M. Shmyryeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 492-495. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 78.55.Mb, 78.66.Bf https://nasplib.isofts.kiev.ua/handle/123456789/118088 In this work, the technique of formation of homogeneous nanoporous silicon layers with high internal surface on solar cell substrates by stain etching is developed. Emission and structure properties of such layers were studied by photoluminescence (PL), photoluminescence excitation, Auger electronic spectroscopy, atomic force microscopy and scanning tunnel microscopy methods. It was observed that nanoporous layers are of high homogeneity and their thickness is ~20-25 nm. It was shown that the higher PL intensity of such layers in comparison with PL intensity of the layers prepared on standard substrates in the same regimes is connected with the higher internal surface. The increase of PL intensity during prolonged aging in air at the room temperature was observed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Structure and luminescence study of nanoporous silicon layers with high internal surface Article published earlier |
| spellingShingle | Structure and luminescence study of nanoporous silicon layers with high internal surface Makara, V.A. Melnichenko, M.M. Svezhentsova, K.V. Khomenkova, L.Yu. Shmyryeva, O.M. |
| title | Structure and luminescence study of nanoporous silicon layers with high internal surface |
| title_full | Structure and luminescence study of nanoporous silicon layers with high internal surface |
| title_fullStr | Structure and luminescence study of nanoporous silicon layers with high internal surface |
| title_full_unstemmed | Structure and luminescence study of nanoporous silicon layers with high internal surface |
| title_short | Structure and luminescence study of nanoporous silicon layers with high internal surface |
| title_sort | structure and luminescence study of nanoporous silicon layers with high internal surface |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118088 |
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