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Structure and luminescence study of nanoporous silicon layers with high internal surface

In this work, the technique of formation of homogeneous nanoporous silicon layers with high internal surface on solar cell substrates by stain etching is developed. Emission and structure properties of such layers were studied by photoluminescence (PL), photoluminescence excitation, Auger electronic...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2003
Hauptverfasser: Makara, V.A., Melnichenko, M.M., Svezhentsova, K.V., Khomenkova, L.Yu., Shmyryeva, O.M.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118088
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Structure and luminescence study of nanoporous silicon layers with high internal surface / V.A. Makara, M.M. Melnichenko, K.V. Svezhentsova, L.Yu. Khomenkova, O.M. Shmyryeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 492-495. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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