Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate

We studied the effect of microwave electromagnetic radiation on silicon low-dimensional structures. The nanocrystalline silicon (nc-Si) films on p-Si substrate were formed with pulsed laser ablation. The surface morphology of films was studied with atomic force microscopy. We made X-ray phase analys...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2003
Hauptverfasser: Kaganovich, E.B., Kizyak, I.M., Kirillova, S.I., Konakova, R.V., Lytvyn, O.S., Lytvyn, P.M., Manoilov, E.G., Primachenko, V.E., Prokopenko, I.V.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118090
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Zitieren:Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate / E.B. Kaganovich, I.M. Kizyak, S.I. Kirillova, R.V. Konakova, O.S. Lytvyn, P.M. Lytvyn, E.G. Manoilov, V.E. Primachenko, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 471-478. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118090
record_format dspace
spelling Kaganovich, E.B.
Kizyak, I.M.
Kirillova, S.I.
Konakova, R.V.
Lytvyn, O.S.
Lytvyn, P.M.
Manoilov, E.G.
Primachenko, V.E.
Prokopenko, I.V.
2017-05-28T16:46:06Z
2017-05-28T16:46:06Z
2003
Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate / E.B. Kaganovich, I.M. Kizyak, S.I. Kirillova, R.V. Konakova, O.S. Lytvyn, P.M. Lytvyn, E.G. Manoilov, V.E. Primachenko, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 471-478. — Бібліогр.: 12 назв. — англ.
1560-8034
PACS: 73.63.Bd, 78.55.Ap, 78.67.Bf
https://nasplib.isofts.kiev.ua/handle/123456789/118090
We studied the effect of microwave electromagnetic radiation on silicon low-dimensional structures. The nanocrystalline silicon (nc-Si) films on p-Si substrate were formed with pulsed laser ablation. The surface morphology of films was studied with atomic force microscopy. We made X-ray phase analysis of films and measured strains in the structures obtained using X-ray diffractometry. We also investigated the time-resolved photoluminescence (PL) spectra and temperature dependence of photovoltage for the nc-Si/p-Si and nc- Si<Au>/p-Si structures, both before and after exposure to magnetron microwave radiation of moderate (1.5 W/cm²) irradiance. It was shown that after microwave irradiation photovoltage in the nc-Si films, as well as electron trap concentration in both the films and p-Si substrates, decrease. After irradiation of the nc-Si/p-Si structures the density of interfacial electron states (IES) decreases, while both PL intensity and relaxation time increase. At the same time irradiation of the nc-Si<Au>/p-Si structures that had high values of PL intensities and relaxation times before irradiation results in decrease of these values, as well as somewhat increases the density of IES. Higher (7.5 W/cm2) irradiance of microwave field impairs the PL properties (to the point of complete disappearance of PL). In addition it induces changes in film structure resulting, in the course of time, in decrease of strains in the structures studied. We discuss some mechanisms for microwave field effect on the properties of these structures.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate
spellingShingle Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate
Kaganovich, E.B.
Kizyak, I.M.
Kirillova, S.I.
Konakova, R.V.
Lytvyn, O.S.
Lytvyn, P.M.
Manoilov, E.G.
Primachenko, V.E.
Prokopenko, I.V.
title_short Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate
title_full Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate
title_fullStr Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate
title_full_unstemmed Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate
title_sort effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate
author Kaganovich, E.B.
Kizyak, I.M.
Kirillova, S.I.
Konakova, R.V.
Lytvyn, O.S.
Lytvyn, P.M.
Manoilov, E.G.
Primachenko, V.E.
Prokopenko, I.V.
author_facet Kaganovich, E.B.
Kizyak, I.M.
Kirillova, S.I.
Konakova, R.V.
Lytvyn, O.S.
Lytvyn, P.M.
Manoilov, E.G.
Primachenko, V.E.
Prokopenko, I.V.
publishDate 2003
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description We studied the effect of microwave electromagnetic radiation on silicon low-dimensional structures. The nanocrystalline silicon (nc-Si) films on p-Si substrate were formed with pulsed laser ablation. The surface morphology of films was studied with atomic force microscopy. We made X-ray phase analysis of films and measured strains in the structures obtained using X-ray diffractometry. We also investigated the time-resolved photoluminescence (PL) spectra and temperature dependence of photovoltage for the nc-Si/p-Si and nc- Si<Au>/p-Si structures, both before and after exposure to magnetron microwave radiation of moderate (1.5 W/cm²) irradiance. It was shown that after microwave irradiation photovoltage in the nc-Si films, as well as electron trap concentration in both the films and p-Si substrates, decrease. After irradiation of the nc-Si/p-Si structures the density of interfacial electron states (IES) decreases, while both PL intensity and relaxation time increase. At the same time irradiation of the nc-Si<Au>/p-Si structures that had high values of PL intensities and relaxation times before irradiation results in decrease of these values, as well as somewhat increases the density of IES. Higher (7.5 W/cm2) irradiance of microwave field impairs the PL properties (to the point of complete disappearance of PL). In addition it induces changes in film structure resulting, in the course of time, in decrease of strains in the structures studied. We discuss some mechanisms for microwave field effect on the properties of these structures.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118090
citation_txt Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate / E.B. Kaganovich, I.M. Kizyak, S.I. Kirillova, R.V. Konakova, O.S. Lytvyn, P.M. Lytvyn, E.G. Manoilov, V.E. Primachenko, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 471-478. — Бібліогр.: 12 назв. — англ.
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