Configuration interaction in delta-doped heterostructures
We analyze the tunnel coupling between an impurity state located in a δ-layer and the 2D delocalized
 states in the quantum well (QW) located at a few nanometers from the δ-layer. The problem is formulated in
 terms of Anderson–Fano model as configuration interaction between the carr...
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| Опубліковано в: : | Физика низких температур |
|---|---|
| Дата: | 2013 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2013
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118094 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Configuration interaction in delta-doped heterostructures / I.V. Rozhansky, N.S. Averkiev, E. Lähderanta // Физика низких температур. — 2013. — Т. 39, № 1. — С. 40–47. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862637973753823232 |
|---|---|
| author | Rozhansky, I.V. Averkiev, N.S. Lähderanta, E. |
| author_facet | Rozhansky, I.V. Averkiev, N.S. Lähderanta, E. |
| citation_txt | Configuration interaction in delta-doped heterostructures / I.V. Rozhansky, N.S. Averkiev, E. Lähderanta // Физика низких температур. — 2013. — Т. 39, № 1. — С. 40–47. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | We analyze the tunnel coupling between an impurity state located in a δ-layer and the 2D delocalized
states in the quantum well (QW) located at a few nanometers from the δ-layer. The problem is formulated in
terms of Anderson–Fano model as configuration interaction between the carrier bound state at the impurity
and the continuum of delocalized states in the QW. An effect of this interaction on the interband optical transitions
in the QW is analyzed. The results are discussed regarding the series of experiments on the GaAs
structures with a δ-Mn layer.
|
| first_indexed | 2025-11-30T23:06:13Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118094 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-11-30T23:06:13Z |
| publishDate | 2013 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| record_format | dspace |
| spelling | Rozhansky, I.V. Averkiev, N.S. Lähderanta, E. 2017-05-28T16:53:22Z 2017-05-28T16:53:22Z 2013 Configuration interaction in delta-doped heterostructures / I.V. Rozhansky, N.S. Averkiev, E. Lähderanta // Физика низких температур. — 2013. — Т. 39, № 1. — С. 40–47. — Бібліогр.: 13 назв. — англ. 0132-6414 PACS: 75.75.–c, 78.55.Cr, 78.67.De https://nasplib.isofts.kiev.ua/handle/123456789/118094 We analyze the tunnel coupling between an impurity state located in a δ-layer and the 2D delocalized
 states in the quantum well (QW) located at a few nanometers from the δ-layer. The problem is formulated in
 terms of Anderson–Fano model as configuration interaction between the carrier bound state at the impurity
 and the continuum of delocalized states in the QW. An effect of this interaction on the interband optical transitions
 in the QW is analyzed. The results are discussed regarding the series of experiments on the GaAs
 structures with a δ-Mn layer. We thank V.D. Kulakovskii for very fruitful discussions
 and also express our thanks to B.A. Aronzon, P.I. Arseev,
 V.L. Korenev, M.M. Glazov, V.F. Sapega, S.V. Zaitsev for
 very useful and helpful comments. The work has been
 supported by RFBR (grants Nos. 11-02-00348, 11-02-
 00146, 12-02-00815, 12-02-00141), Russian Ministry of
 Education and Science (contract N 14.740.11.0892, contract
 N 11.G34.31.0001 with SPbSPU and leading scientist
 G.G. Pavlov), RF President Grant NSh-5442.2012.2. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур XIX Уральская международная зимняя школа по физике полупроводников Configuration interaction in delta-doped heterostructures Article published earlier |
| spellingShingle | Configuration interaction in delta-doped heterostructures Rozhansky, I.V. Averkiev, N.S. Lähderanta, E. XIX Уральская международная зимняя школа по физике полупроводников |
| title | Configuration interaction in delta-doped heterostructures |
| title_full | Configuration interaction in delta-doped heterostructures |
| title_fullStr | Configuration interaction in delta-doped heterostructures |
| title_full_unstemmed | Configuration interaction in delta-doped heterostructures |
| title_short | Configuration interaction in delta-doped heterostructures |
| title_sort | configuration interaction in delta-doped heterostructures |
| topic | XIX Уральская международная зимняя школа по физике полупроводников |
| topic_facet | XIX Уральская международная зимняя школа по физике полупроводников |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118094 |
| work_keys_str_mv | AT rozhanskyiv configurationinteractionindeltadopedheterostructures AT averkievns configurationinteractionindeltadopedheterostructures AT lahderantae configurationinteractionindeltadopedheterostructures |