Configuration interaction in delta-doped heterostructures
We analyze the tunnel coupling between an impurity state located in a δ-layer and the 2D delocalized states in the quantum well (QW) located at a few nanometers from the δ-layer. The problem is formulated in terms of Anderson–Fano model as configuration interaction between the carrier bound state...
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| Published in: | Физика низких температур |
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| Date: | 2013 |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2013
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118094 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Configuration interaction in delta-doped heterostructures / I.V. Rozhansky, N.S. Averkiev, E. Lähderanta // Физика низких температур. — 2013. — Т. 39, № 1. — С. 40–47. — Бібліогр.: 13 назв. — англ. |
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Rozhansky, I.V. Averkiev, N.S. Lähderanta, E. 2017-05-28T16:53:22Z 2017-05-28T16:53:22Z 2013 Configuration interaction in delta-doped heterostructures / I.V. Rozhansky, N.S. Averkiev, E. Lähderanta // Физика низких температур. — 2013. — Т. 39, № 1. — С. 40–47. — Бібліогр.: 13 назв. — англ. 0132-6414 PACS: 75.75.–c, 78.55.Cr, 78.67.De https://nasplib.isofts.kiev.ua/handle/123456789/118094 We analyze the tunnel coupling between an impurity state located in a δ-layer and the 2D delocalized states in the quantum well (QW) located at a few nanometers from the δ-layer. The problem is formulated in terms of Anderson–Fano model as configuration interaction between the carrier bound state at the impurity and the continuum of delocalized states in the QW. An effect of this interaction on the interband optical transitions in the QW is analyzed. The results are discussed regarding the series of experiments on the GaAs structures with a δ-Mn layer. We thank V.D. Kulakovskii for very fruitful discussions and also express our thanks to B.A. Aronzon, P.I. Arseev, V.L. Korenev, M.M. Glazov, V.F. Sapega, S.V. Zaitsev for very useful and helpful comments. The work has been supported by RFBR (grants Nos. 11-02-00348, 11-02- 00146, 12-02-00815, 12-02-00141), Russian Ministry of Education and Science (contract N 14.740.11.0892, contract N 11.G34.31.0001 with SPbSPU and leading scientist G.G. Pavlov), RF President Grant NSh-5442.2012.2. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур XIX Уральская международная зимняя школа по физике полупроводников Configuration interaction in delta-doped heterostructures Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
| title |
Configuration interaction in delta-doped heterostructures |
| spellingShingle |
Configuration interaction in delta-doped heterostructures Rozhansky, I.V. Averkiev, N.S. Lähderanta, E. XIX Уральская международная зимняя школа по физике полупроводников |
| title_short |
Configuration interaction in delta-doped heterostructures |
| title_full |
Configuration interaction in delta-doped heterostructures |
| title_fullStr |
Configuration interaction in delta-doped heterostructures |
| title_full_unstemmed |
Configuration interaction in delta-doped heterostructures |
| title_sort |
configuration interaction in delta-doped heterostructures |
| author |
Rozhansky, I.V. Averkiev, N.S. Lähderanta, E. |
| author_facet |
Rozhansky, I.V. Averkiev, N.S. Lähderanta, E. |
| topic |
XIX Уральская международная зимняя школа по физике полупроводников |
| topic_facet |
XIX Уральская международная зимняя школа по физике полупроводников |
| publishDate |
2013 |
| language |
English |
| container_title |
Физика низких температур |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| format |
Article |
| description |
We analyze the tunnel coupling between an impurity state located in a δ-layer and the 2D delocalized
states in the quantum well (QW) located at a few nanometers from the δ-layer. The problem is formulated in
terms of Anderson–Fano model as configuration interaction between the carrier bound state at the impurity
and the continuum of delocalized states in the QW. An effect of this interaction on the interband optical transitions
in the QW is analyzed. The results are discussed regarding the series of experiments on the GaAs
structures with a δ-Mn layer.
|
| issn |
0132-6414 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118094 |
| citation_txt |
Configuration interaction in delta-doped heterostructures / I.V. Rozhansky, N.S. Averkiev, E. Lähderanta // Физика низких температур. — 2013. — Т. 39, № 1. — С. 40–47. — Бібліогр.: 13 назв. — англ. |
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AT rozhanskyiv configurationinteractionindeltadopedheterostructures AT averkievns configurationinteractionindeltadopedheterostructures AT lahderantae configurationinteractionindeltadopedheterostructures |
| first_indexed |
2025-11-30T23:06:13Z |
| last_indexed |
2025-11-30T23:06:13Z |
| _version_ |
1850858758407716864 |