Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure
Spin-on Methylsilsesquioxane (MSQ) exhibits low dielectric constant and is an important and promising material to reduce parasitic capacitive coupling between metal layers in semiconductor integrated circuits. However, MSQ has lower film density and therefore more porous than the traditional silicon...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2003 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118103 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure / K.C. Aw, K. Ibrahim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 524-527. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862556584959279104 |
|---|---|
| author | Aw, K.C. Ibrahim, K. |
| author_facet | Aw, K.C. Ibrahim, K. |
| citation_txt | Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure / K.C. Aw, K. Ibrahim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 524-527. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Spin-on Methylsilsesquioxane (MSQ) exhibits low dielectric constant and is an important and promising material to reduce parasitic capacitive coupling between metal layers in semiconductor integrated circuits. However, MSQ has lower film density and therefore more porous than the traditional silicon dioxide (SiO₂) film and could pose reliability issues. This paper is an extension to previous paper [1], which reported that evaporated copper (Cu) onto spin-on MSQ has high leakage current and provides two alternative models with the aid of energy band diagrams to describe the effect of evaporated Cu onto spin-on MSQ using Metal Oxide Semiconductor capacitor (MOSC) structure.
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| first_indexed | 2025-11-25T22:33:22Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118103 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T22:33:22Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Aw, K.C. Ibrahim, K. 2017-05-28T17:11:37Z 2017-05-28T17:11:37Z 2003 Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure / K.C. Aw, K. Ibrahim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 524-527. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 42.55 Rz https://nasplib.isofts.kiev.ua/handle/123456789/118103 Spin-on Methylsilsesquioxane (MSQ) exhibits low dielectric constant and is an important and promising material to reduce parasitic capacitive coupling between metal layers in semiconductor integrated circuits. However, MSQ has lower film density and therefore more porous than the traditional silicon dioxide (SiO₂) film and could pose reliability issues. This paper is an extension to previous paper [1], which reported that evaporated copper (Cu) onto spin-on MSQ has high leakage current and provides two alternative models with the aid of energy band diagrams to describe the effect of evaporated Cu onto spin-on MSQ using Metal Oxide Semiconductor capacitor (MOSC) structure. The authors would like to thank Dr. Mat Johar and Miss Еe Вee Choo of University Science Malaysia for their help with the C-V meter measurement and clean-room support respectively. The authors would also like to thank Altera Corporation, Penang for the use of micro probing, НP Semiconductor Parameter Analyser, and Chemical Lab facility. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure Article published earlier |
| spellingShingle | Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure Aw, K.C. Ibrahim, K. |
| title | Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure |
| title_full | Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure |
| title_fullStr | Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure |
| title_full_unstemmed | Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure |
| title_short | Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure |
| title_sort | dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118103 |
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