Exciton effects in band-edge electroluminescence of silicon barrier structures
A theoretical analysis of the band-edge electroluminescence efficiency in silicon diodes and p-i-n-structures has been made. We have shown that maximal possible efficiency can achieve 10 % both at room and liquid nitrogen temperatures. Maximal values of the efficiency are restricted by the interband...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2004 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118104 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Exciton effects in band-edge electroluminescence of silicon barrier structures / A.V. Sachenko, A.P. Gorban, D.V. Korbutyak, V.P. Kostylyov, Yu.V. Kryuchenko, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 1-7. — Бібліогр.: 20 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862576084592099328 |
|---|---|
| author | Sachenko, A.V. Gorban, A.P. Korbutyak, D.V. Kostylyov, V.P. Kryuchenko, Yu.V. Chernenko, V.V. |
| author_facet | Sachenko, A.V. Gorban, A.P. Korbutyak, D.V. Kostylyov, V.P. Kryuchenko, Yu.V. Chernenko, V.V. |
| citation_txt | Exciton effects in band-edge electroluminescence of silicon barrier structures / A.V. Sachenko, A.P. Gorban, D.V. Korbutyak, V.P. Kostylyov, Yu.V. Kryuchenko, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 1-7. — Бібліогр.: 20 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | A theoretical analysis of the band-edge electroluminescence efficiency in silicon diodes and p-i-n-structures has been made. We have shown that maximal possible efficiency can achieve 10 % both at room and liquid nitrogen temperatures. Maximal values of the efficiency are restricted by the interband Auger recombination process. It is found that electroluminescence efficiency decreases rapidly with the decrease of characteristic Shockley- Reed-Hall nonradiative lifetime for minority carriers. It is shown that even at room temperatures the main contribution into the edge electroluminescence in silicon barrier structures is given by excitonic effects. Dark I-V characteristics of directly biased silicon diodes measured both at room and nitrogen temperatures are used to explain anomalous temperature dependencies of silicon diode electroluminescence.
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| first_indexed | 2025-11-26T14:23:32Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118104 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-26T14:23:32Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sachenko, A.V. Gorban, A.P. Korbutyak, D.V. Kostylyov, V.P. Kryuchenko, Yu.V. Chernenko, V.V. 2017-05-28T17:26:50Z 2017-05-28T17:26:50Z 2004 Exciton effects in band-edge electroluminescence of silicon barrier structures / A.V. Sachenko, A.P. Gorban, D.V. Korbutyak, V.P. Kostylyov, Yu.V. Kryuchenko, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 1-7. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS: 71.35.-y, 72.20.jv, 78.20.-e, 78.60.-b, 78.60.Fi https://nasplib.isofts.kiev.ua/handle/123456789/118104 A theoretical analysis of the band-edge electroluminescence efficiency in silicon diodes and p-i-n-structures has been made. We have shown that maximal possible efficiency can achieve 10 % both at room and liquid nitrogen temperatures. Maximal values of the efficiency are restricted by the interband Auger recombination process. It is found that electroluminescence efficiency decreases rapidly with the decrease of characteristic Shockley- Reed-Hall nonradiative lifetime for minority carriers. It is shown that even at room temperatures the main contribution into the edge electroluminescence in silicon barrier structures is given by excitonic effects. Dark I-V characteristics of directly biased silicon diodes measured both at room and nitrogen temperatures are used to explain anomalous temperature dependencies of silicon diode electroluminescence. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Exciton effects in band-edge electroluminescence of silicon barrier structures Article published earlier |
| spellingShingle | Exciton effects in band-edge electroluminescence of silicon barrier structures Sachenko, A.V. Gorban, A.P. Korbutyak, D.V. Kostylyov, V.P. Kryuchenko, Yu.V. Chernenko, V.V. |
| title | Exciton effects in band-edge electroluminescence of silicon barrier structures |
| title_full | Exciton effects in band-edge electroluminescence of silicon barrier structures |
| title_fullStr | Exciton effects in band-edge electroluminescence of silicon barrier structures |
| title_full_unstemmed | Exciton effects in band-edge electroluminescence of silicon barrier structures |
| title_short | Exciton effects in band-edge electroluminescence of silicon barrier structures |
| title_sort | exciton effects in band-edge electroluminescence of silicon barrier structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118104 |
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