State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type

The morphology and composition of Cd₁₋xZnxTe and Cd₁₋xMnxTe solid solutions surfaces after different types of surface treatment were investigated. Chemical etching of the surfaces and polishing by diamond pastes cause change of surface stoichiometry and ontamination
 of surface layer by carb...

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Збережено в:
Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2004
Автори: Dremlyuzhenko, S.G., Zakharuk, Z.I., Rarenko, I.M., Srtebegev, V.M., Voloshchuk, A.G., Yurijchuk, I.M.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/118105
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type / S.G. Dremlyuzhenko, Z.I. Zakharuk, I.M. Rarenko, V.M. Srtebegev, A.G. Voloshchuk, I.M. Yurijchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 52-55. — Бібліогр.: 9 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Dremlyuzhenko, S.G.
Zakharuk, Z.I.
Rarenko, I.M.
Srtebegev, V.M.
Voloshchuk, A.G.
Yurijchuk, I.M.
author_facet Dremlyuzhenko, S.G.
Zakharuk, Z.I.
Rarenko, I.M.
Srtebegev, V.M.
Voloshchuk, A.G.
Yurijchuk, I.M.
citation_txt State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type / S.G. Dremlyuzhenko, Z.I. Zakharuk, I.M. Rarenko, V.M. Srtebegev, A.G. Voloshchuk, I.M. Yurijchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 52-55. — Бібліогр.: 9 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description The morphology and composition of Cd₁₋xZnxTe and Cd₁₋xMnxTe solid solutions surfaces after different types of surface treatment were investigated. Chemical etching of the surfaces and polishing by diamond pastes cause change of surface stoichiometry and ontamination
 of surface layer by carbon and etchant components. Potentiometer studies were carried out to study the processes that take place on the interface "semiconductor-electrolyte". A prediction of phase composition of oxide films on Cd₁₋xZnxTe and Cd₁₋xMnxTe surfaces was made and a mechanism of their dissolution was determined. It was found that chemicomechanical polishing by alkaline colloidal silica compositions is an optimal surface treatment procedure. Chemico-mechanical polishing with this mixture gives a uniform surface without essential change of surface stoichiometry and fouling of the surface layer by etchant components.
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language English
last_indexed 2025-11-24T23:40:09Z
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publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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spelling Dremlyuzhenko, S.G.
Zakharuk, Z.I.
Rarenko, I.M.
Srtebegev, V.M.
Voloshchuk, A.G.
Yurijchuk, I.M.
2017-05-28T17:27:45Z
2017-05-28T17:27:45Z
2004
State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type / S.G. Dremlyuzhenko, Z.I. Zakharuk, I.M. Rarenko, V.M. Srtebegev, A.G. Voloshchuk, I.M. Yurijchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 52-55. — Бібліогр.: 9 назв. — англ.
1560-8034
PACS: 79.20.Rf; 79.60.Bm
https://nasplib.isofts.kiev.ua/handle/123456789/118105
The morphology and composition of Cd₁₋xZnxTe and Cd₁₋xMnxTe solid solutions surfaces after different types of surface treatment were investigated. Chemical etching of the surfaces and polishing by diamond pastes cause change of surface stoichiometry and ontamination
 of surface layer by carbon and etchant components. Potentiometer studies were carried out to study the processes that take place on the interface "semiconductor-electrolyte". A prediction of phase composition of oxide films on Cd₁₋xZnxTe and Cd₁₋xMnxTe surfaces was made and a mechanism of their dissolution was determined. It was found that chemicomechanical polishing by alkaline colloidal silica compositions is an optimal surface treatment procedure. Chemico-mechanical polishing with this mixture gives a uniform surface without essential change of surface stoichiometry and fouling of the surface layer by etchant components.
The financial support of the Civilian Research and Development Foundation (grant UP2-536) and the Science and Technology Center of Ukraine (grant №1440) is gratefully acknowledged.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type
Article
published earlier
spellingShingle State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type
Dremlyuzhenko, S.G.
Zakharuk, Z.I.
Rarenko, I.M.
Srtebegev, V.M.
Voloshchuk, A.G.
Yurijchuk, I.M.
title State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type
title_full State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type
title_fullStr State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type
title_full_unstemmed State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type
title_short State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type
title_sort state of cd₁₋xznxte and cd₁₋xmnxte surface depending on treatment type
url https://nasplib.isofts.kiev.ua/handle/123456789/118105
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