State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type
The morphology and composition of Cd₁₋xZnxTe and Cd₁₋xMnxTe solid solutions surfaces after different types of surface treatment were investigated. Chemical etching of the surfaces and polishing by diamond pastes cause change of surface stoichiometry and ontamination
 of surface layer by carb...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2004 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118105 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type / S.G. Dremlyuzhenko, Z.I. Zakharuk, I.M. Rarenko, V.M. Srtebegev, A.G. Voloshchuk, I.M. Yurijchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 52-55. — Бібліогр.: 9 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862544173746356224 |
|---|---|
| author | Dremlyuzhenko, S.G. Zakharuk, Z.I. Rarenko, I.M. Srtebegev, V.M. Voloshchuk, A.G. Yurijchuk, I.M. |
| author_facet | Dremlyuzhenko, S.G. Zakharuk, Z.I. Rarenko, I.M. Srtebegev, V.M. Voloshchuk, A.G. Yurijchuk, I.M. |
| citation_txt | State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type / S.G. Dremlyuzhenko, Z.I. Zakharuk, I.M. Rarenko, V.M. Srtebegev, A.G. Voloshchuk, I.M. Yurijchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 52-55. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The morphology and composition of Cd₁₋xZnxTe and Cd₁₋xMnxTe solid solutions surfaces after different types of surface treatment were investigated. Chemical etching of the surfaces and polishing by diamond pastes cause change of surface stoichiometry and ontamination
of surface layer by carbon and etchant components. Potentiometer studies were carried out to study the processes that take place on the interface "semiconductor-electrolyte". A prediction of phase composition of oxide films on Cd₁₋xZnxTe and Cd₁₋xMnxTe surfaces was made and a mechanism of their dissolution was determined. It was found that chemicomechanical polishing by alkaline colloidal silica compositions is an optimal surface treatment procedure. Chemico-mechanical polishing with this mixture gives a uniform surface without essential change of surface stoichiometry and fouling of the surface layer by etchant components.
|
| first_indexed | 2025-11-24T23:40:09Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118105 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T23:40:09Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Dremlyuzhenko, S.G. Zakharuk, Z.I. Rarenko, I.M. Srtebegev, V.M. Voloshchuk, A.G. Yurijchuk, I.M. 2017-05-28T17:27:45Z 2017-05-28T17:27:45Z 2004 State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type / S.G. Dremlyuzhenko, Z.I. Zakharuk, I.M. Rarenko, V.M. Srtebegev, A.G. Voloshchuk, I.M. Yurijchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 52-55. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 79.20.Rf; 79.60.Bm https://nasplib.isofts.kiev.ua/handle/123456789/118105 The morphology and composition of Cd₁₋xZnxTe and Cd₁₋xMnxTe solid solutions surfaces after different types of surface treatment were investigated. Chemical etching of the surfaces and polishing by diamond pastes cause change of surface stoichiometry and ontamination
 of surface layer by carbon and etchant components. Potentiometer studies were carried out to study the processes that take place on the interface "semiconductor-electrolyte". A prediction of phase composition of oxide films on Cd₁₋xZnxTe and Cd₁₋xMnxTe surfaces was made and a mechanism of their dissolution was determined. It was found that chemicomechanical polishing by alkaline colloidal silica compositions is an optimal surface treatment procedure. Chemico-mechanical polishing with this mixture gives a uniform surface without essential change of surface stoichiometry and fouling of the surface layer by etchant components. The financial support of the Civilian Research and Development Foundation (grant UP2-536) and the Science and Technology Center of Ukraine (grant №1440) is gratefully acknowledged. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type Article published earlier |
| spellingShingle | State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type Dremlyuzhenko, S.G. Zakharuk, Z.I. Rarenko, I.M. Srtebegev, V.M. Voloshchuk, A.G. Yurijchuk, I.M. |
| title | State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type |
| title_full | State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type |
| title_fullStr | State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type |
| title_full_unstemmed | State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type |
| title_short | State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type |
| title_sort | state of cd₁₋xznxte and cd₁₋xmnxte surface depending on treatment type |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118105 |
| work_keys_str_mv | AT dremlyuzhenkosg stateofcd1xznxteandcd1xmnxtesurfacedependingontreatmenttype AT zakharukzi stateofcd1xznxteandcd1xmnxtesurfacedependingontreatmenttype AT rarenkoim stateofcd1xznxteandcd1xmnxtesurfacedependingontreatmenttype AT srtebegevvm stateofcd1xznxteandcd1xmnxtesurfacedependingontreatmenttype AT voloshchukag stateofcd1xznxteandcd1xmnxtesurfacedependingontreatmenttype AT yurijchukim stateofcd1xznxteandcd1xmnxtesurfacedependingontreatmenttype |