Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge₃₃As₁₂Se₅₅
Ge₃₃As₁₂Se₅₅-Si(n) heterostructures with modified by bismuth atoms transition layer were obtained by the discrete thermal evaporation method. Described are formation and investigation methods for these heterostructures. The mechanism of charge transmission in this heterostructures was ascertained. I...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2004 |
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| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118107 |
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| Zitieren: | Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge₃₃As₁₂Se₅₅ / O. Kondrat, N. Popovich, N. Dovgoshej // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 56-59. — Бібліогр.: 13 назв. — англ. |
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Kondrat, O. Popovich, N. Dovgoshej, N. 2017-05-28T17:29:43Z 2017-05-28T17:29:43Z 2004 Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge₃₃As₁₂Se₅₅ / O. Kondrat, N. Popovich, N. Dovgoshej // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 56-59. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 73.40.-c https://nasplib.isofts.kiev.ua/handle/123456789/118107 Ge₃₃As₁₂Se₅₅-Si(n) heterostructures with modified by bismuth atoms transition layer were obtained by the discrete thermal evaporation method. Described are formation and investigation methods for these heterostructures. The mechanism of charge transmission in this heterostructures was ascertained. It is illustrated that the barrier for holes at the boundary is absent. The energy diagram of the heterostructure was built. Analyzed is the absence of a soft breakdown, which is caused by the electrons transfer through interstices when the negative voltage is applied. The dependence of heterostructure electrophysical properties on Ge₃₃As₁₂Se₅₅ film thickness was investigated. It is shown that in heterostructures with a modified transition layer ther is a necessity to use Ge₃₃As₁₂Se₅₅ film with the thickness more than 0.4 mm. It is ascertained that at the modification of the transition layer the conversion from the sharp to smooth transition takes place, which is caused by diffusion of bismuth atoms to surface layers. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge₃₃As₁₂Se₅₅ Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge₃₃As₁₂Se₅₅ |
| spellingShingle |
Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge₃₃As₁₂Se₅₅ Kondrat, O. Popovich, N. Dovgoshej, N. |
| title_short |
Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge₃₃As₁₂Se₅₅ |
| title_full |
Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge₃₃As₁₂Se₅₅ |
| title_fullStr |
Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge₃₃As₁₂Se₅₅ |
| title_full_unstemmed |
Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge₃₃As₁₂Se₅₅ |
| title_sort |
charge transition phenomena in the heterostructure crystalline si-bi-amorphous film ge₃₃as₁₂se₅₅ |
| author |
Kondrat, O. Popovich, N. Dovgoshej, N. |
| author_facet |
Kondrat, O. Popovich, N. Dovgoshej, N. |
| publishDate |
2004 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Ge₃₃As₁₂Se₅₅-Si(n) heterostructures with modified by bismuth atoms transition layer were obtained by the discrete thermal evaporation method. Described are formation and investigation methods for these heterostructures. The mechanism of charge transmission in this heterostructures was ascertained. It is illustrated that the barrier for holes at the boundary is absent. The energy diagram of the heterostructure was built. Analyzed is the absence of a soft breakdown, which is caused by the electrons transfer through interstices when the negative voltage is applied. The dependence of heterostructure electrophysical properties on Ge₃₃As₁₂Se₅₅ film thickness was investigated. It is shown that in heterostructures with a modified transition layer ther is a necessity to use Ge₃₃As₁₂Se₅₅ film with the thickness more than 0.4 mm. It is ascertained that at the modification of the transition layer the conversion from the sharp to smooth transition takes place, which is caused by diffusion of bismuth atoms to surface layers.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118107 |
| citation_txt |
Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge₃₃As₁₂Se₅₅ / O. Kondrat, N. Popovich, N. Dovgoshej // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 56-59. — Бібліогр.: 13 назв. — англ. |
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2025-12-07T17:16:34Z |
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2025-12-07T17:16:34Z |
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1850870641783209984 |