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Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge₃₃As₁₂Se₅₅

Ge₃₃As₁₂Se₅₅-Si(n) heterostructures with modified by bismuth atoms transition layer were obtained by the discrete thermal evaporation method. Described are formation and investigation methods for these heterostructures. The mechanism of charge transmission in this heterostructures was ascertained. I...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2004
Main Authors: Kondrat, O., Popovich, N., Dovgoshej, N.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118107
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge₃₃As₁₂Se₅₅ / O. Kondrat, N. Popovich, N. Dovgoshej // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 56-59. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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