The simple approach to determination of active diffused phosphorus density in silicon
The diffusion of Phosphorus in silicon using a POCl₃ source has been considered. In the base of Fair-Tsai model of P-diffusion an empirical equation for calculation of active diffused phosphorus density (Qel), is proposed. In this equation, a relationship between (Qel), diffusion time, temperature a...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2004 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118109 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The simple approach to determination of active diffused phosphorus density in silicon / M. Sasani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 22-25. — Бібліогр.: 20 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862684050294046720 |
|---|---|
| author | Sasani, M. |
| author_facet | Sasani, M. |
| citation_txt | The simple approach to determination of active diffused phosphorus density in silicon / M. Sasani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 22-25. — Бібліогр.: 20 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The diffusion of Phosphorus in silicon using a POCl₃ source has been considered. In the base of Fair-Tsai model of P-diffusion an empirical equation for calculation of active diffused phosphorus density (Qel), is proposed. In this equation, a relationship between (Qel), diffusion time, temperature and junction depth of P-diffused layer (Xj), is presented. The value of sheet resistance (Rs), which is taken from theoretical determination at 900°C, has a good agreement with experimental result.
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| first_indexed | 2025-12-07T15:56:55Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118109 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:56:55Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sasani, M. 2017-05-28T17:31:14Z 2017-05-28T17:31:14Z 2004 The simple approach to determination of active diffused phosphorus density in silicon / M. Sasani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 22-25. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS: 61.72.Tt, 66.30.Lw https://nasplib.isofts.kiev.ua/handle/123456789/118109 The diffusion of Phosphorus in silicon using a POCl₃ source has been considered. In the base of Fair-Tsai model of P-diffusion an empirical equation for calculation of active diffused phosphorus density (Qel), is proposed. In this equation, a relationship between (Qel), diffusion time, temperature and junction depth of P-diffused layer (Xj), is presented. The value of sheet resistance (Rs), which is taken from theoretical determination at 900°C, has a good agreement with experimental result. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The simple approach to determination of active diffused phosphorus density in silicon Article published earlier |
| spellingShingle | The simple approach to determination of active diffused phosphorus density in silicon Sasani, M. |
| title | The simple approach to determination of active diffused phosphorus density in silicon |
| title_full | The simple approach to determination of active diffused phosphorus density in silicon |
| title_fullStr | The simple approach to determination of active diffused phosphorus density in silicon |
| title_full_unstemmed | The simple approach to determination of active diffused phosphorus density in silicon |
| title_short | The simple approach to determination of active diffused phosphorus density in silicon |
| title_sort | simple approach to determination of active diffused phosphorus density in silicon |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118109 |
| work_keys_str_mv | AT sasanim thesimpleapproachtodeterminationofactivediffusedphosphorusdensityinsilicon AT sasanim simpleapproachtodeterminationofactivediffusedphosphorusdensityinsilicon |