Ferromagnetism induced in diluted A₁₋xMnxB semiconductors

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2004
• Main Authors: Bryksa, V.P., Tarasov, G.G., Masselink, W.T., Nolting, W., Mazur, Yu.I., Salamo, G.J.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118113
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Ferromagnetism induced in diluted A₁₋xMnxB semiconductors / V.P. Bryksa, G.G. Tarasov, W.T. Masselink, W. Nolting, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 43-51. — Бібліогр.: 22 назв. — англ.

Theoretical model has been developed for analysis of the peculiarities of new type of magnetism in diluted magnetic A₁₋xMnxB semiconductors. The coherent potential is introduced using the dynamic mean field theory (DMFT) approximation and the Baym- Kadanoff hypothesis valid for the case x < x...