Linear field dependencies of conductivity and phonon-induced conductivity of 2D gas in δ-doped GaAs
The electrical field dependencies of current I and its variation under phonon pulses - ΔIph, were measured in δ-doped GaAs with n = 5*10¹¹ nm⁻². It was shown that if E< 1 V/cm and T = 2 K, E/I, and E/Iph linearly increase with E, and while the change in the first value was less than 5%, the secon...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2004 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118116 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Linear field dependencies of conductivity and phonon-induced conductivity of 2D gas in δ-doped GaAs / M.I. Slutskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 68-71. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The electrical field dependencies of current I and its variation under phonon pulses - ΔIph, were measured in δ-doped GaAs with n = 5*10¹¹ nm⁻². It was shown that if E< 1 V/cm and T = 2 K, E/I, and E/Iph linearly increase with E, and while the change in the first value was less than 5%, the second one increased by more than 3 times. The proposed explanation of experimental results is based on the nearness of the studied structure to a metal-insulator transition.
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| ISSN: | 1560-8034 |