On the problem of relaxation for radiation-induced optical effects in some ternary chalcogenide glasses

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2007
• Hauptverfasser: Shpotyuk, O.I., Vakiv, M.M., Butkiewicz, B., Kovalskiy, A.P., Golovchak, R.Ya.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118117
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: On the problem of relaxation for radiation-induced optical effects in some ternary chalcogenide glasses / O.I. Shpotyuk, M.M. Vakiv, B. Butkiewicz, A.P. Kovalskiy, R.Ya. Golovchak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 23-27. — Бібліогр.: 17 назв. — англ.

We have investigated the influence of high-energy γ-irradiation on the optical transmission spectra of ternary Ge-As-S chalcogenide glasses of the stoichiometric As₂S₃-GeS₂ and non-stoichiometric As₂S₃-Ge₂S₃ systems. A long-wave shift of the fundamental absorption edge is observed for all glasses. Two different components of radiation-induced changes were specified: static (residual) and dynamic (time dependent) ones. The dynamic component is mathematically described by the exponential and power functions in respect to post-irradiation periods. It is shown that quantitative features of the observed self-restoration phenomena in the irradiated glasses are closely related to their chemical compositions and stoichiometry.