Local properties of impurity and defects investigated by high pressure spectroscopy
Using the high-pressure spectroscopy, the pressure shifts of the luminescence related to the d-d transitions in transition metal ions and d-f transitions in rare earth ones, which interact with the nearest neighbor host ions of dielectrics, are investigated. The results are obtained for Ti³⁺, Ce³...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2007 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118118 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Local properties of impurity and defects investigated by high pressure spectroscopy / Marek Grinberg // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 28-29. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | Using the high-pressure spectroscopy, the pressure shifts of the luminescence
related to the d-d transitions in transition metal ions and d-f transitions in rare earth ones,
which interact with the nearest neighbor host ions of dielectrics, are investigated. The
results are obtained for Ti³⁺, Ce³⁺, Pr³⁺, and Cr³⁺ ions in various lattices.
|
|---|---|
| ISSN: | 1560-8034 |