Local properties of impurity and defects investigated by high pressure spectroscopy
Using the high-pressure spectroscopy, the pressure shifts of the luminescence related to the d-d transitions in transition metal ions and d-f transitions in rare earth ones, which interact with the nearest neighbor host ions of dielectrics, are investigated. The results are obtained for Ti³⁺, Ce³...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2007 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118118 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Local properties of impurity and defects investigated by high pressure spectroscopy / Marek Grinberg // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 28-29. — англ. |