Local properties of impurity and defects investigated by high pressure spectroscopy

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2007
• Main Author: Grinberg, Marek
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118118
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Local properties of impurity and defects investigated by high pressure spectroscopy / Marek Grinberg // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 28-29. — англ.

Using the high-pressure spectroscopy, the pressure shifts of the luminescence
 related to the d-d transitions in transition metal ions and d-f transitions in rare earth ones,
 which interact with the nearest neighbor host ions of dielectrics, are investigated. The
 results ar...