Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2007
• Main Authors: Savkina, R.K., Smirnov, A.B., Sizov, F.F.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118124
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence / R.K. Savkina, A.B. Smirnov, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 61-64. — Бібліогр.: 15 назв. — англ.

We have carried out a systematic study of mercury cadmium telluride crystals
 subjected to the high-frequency and high-intensity ultrasonic influence. The charge carrier
 transport parameters were determined from the Hall coefficient and conductivity
 measurements. Temperature dependences of the electron concentration without and during
 the ultrasonic load were calculated. A good agreement between the experimental and
 theoretical data was obtained. A model of internal source of the infrared radiation
 associated with a dislocation is proposed for the explanation of sonically stimulated effects in the semiconductor system. We have considered a possibility of the thermooptical excitation in Hg₁₋xCdxTe alloys during sonication, which can result in the nonequilibrium
 charge carrier generation and changes in electrical parameters of the material.