Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence
We have carried out a systematic study of mercury cadmium telluride crystals
 subjected to the high-frequency and high-intensity ultrasonic influence. The charge carrier
 transport parameters were determined from the Hall coefficient and conductivity
 measurements. Temperatur...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2007 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118124 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence / R.K. Savkina, A.B. Smirnov, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 61-64. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862739533091569664 |
|---|---|
| author | Savkina, R.K. Smirnov, A.B. Sizov, F.F. |
| author_facet | Savkina, R.K. Smirnov, A.B. Sizov, F.F. |
| citation_txt | Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence / R.K. Savkina, A.B. Smirnov, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 61-64. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We have carried out a systematic study of mercury cadmium telluride crystals
subjected to the high-frequency and high-intensity ultrasonic influence. The charge carrier
transport parameters were determined from the Hall coefficient and conductivity
measurements. Temperature dependences of the electron concentration without and during
the ultrasonic load were calculated. A good agreement between the experimental and
theoretical data was obtained. A model of internal source of the infrared radiation
associated with a dislocation is proposed for the explanation of sonically stimulated effects in the semiconductor system. We have considered a possibility of the thermooptical excitation in Hg₁₋xCdxTe alloys during sonication, which can result in the nonequilibrium
charge carrier generation and changes in electrical parameters of the material.
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| first_indexed | 2025-12-07T20:09:45Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118124 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:09:45Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Savkina, R.K. Smirnov, A.B. Sizov, F.F. 2017-05-28T17:58:14Z 2017-05-28T17:58:14Z 2007 Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence / R.K. Savkina, A.B. Smirnov, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 61-64. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 07.57.Hm, 43.35.+d, 61.72.Lk, 73.61.Ga, 73.50.Jt https://nasplib.isofts.kiev.ua/handle/123456789/118124 We have carried out a systematic study of mercury cadmium telluride crystals
 subjected to the high-frequency and high-intensity ultrasonic influence. The charge carrier
 transport parameters were determined from the Hall coefficient and conductivity
 measurements. Temperature dependences of the electron concentration without and during
 the ultrasonic load were calculated. A good agreement between the experimental and
 theoretical data was obtained. A model of internal source of the infrared radiation
 associated with a dislocation is proposed for the explanation of sonically stimulated effects in the semiconductor system. We have considered a possibility of the thermooptical excitation in Hg₁₋xCdxTe alloys during sonication, which can result in the nonequilibrium
 charge carrier generation and changes in electrical parameters of the material. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence Article published earlier |
| spellingShingle | Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence Savkina, R.K. Smirnov, A.B. Sizov, F.F. |
| title | Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence |
| title_full | Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence |
| title_fullStr | Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence |
| title_full_unstemmed | Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence |
| title_short | Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence |
| title_sort | dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118124 |
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