Obtaining and optical properties of the glasses of the GeS₂–HgS system

The glassy alloys of the GeS₂–HgS system in the range of 0–50 mol. % HgS were obtained by the melt quenching technique. Their Raman spectra were investigated. The dependence of the particularities of the light scattering bands on the chemical composition was analyzed.

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2007
Hauptverfasser: Nechyporuk, B.D., Olekseyuk, I.D., Yukhymchuk, V.O., Filonenko, V.V., Mazurets, I.I., Parasyuk, O.V.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118125
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Obtaining and optical properties of the glasses of the GeS₂–HgS system / B.D. Nechyporuk, I.D. Olekseyuk, V.O. Yukhymchuk, V.V. Filonenko, I.I. Mazurets, O.V. Parasyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 65-69. — Бібліогр.: 11 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118125
record_format dspace
spelling Nechyporuk, B.D.
Olekseyuk, I.D.
Yukhymchuk, V.O.
Filonenko, V.V.
Mazurets, I.I.
Parasyuk, O.V.
2017-05-28T17:58:49Z
2017-05-28T17:58:49Z
2007
Obtaining and optical properties of the glasses of the GeS₂–HgS system / B.D. Nechyporuk, I.D. Olekseyuk, V.O. Yukhymchuk, V.V. Filonenko, I.I. Mazurets, O.V. Parasyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 65-69. — Бібліогр.: 11 назв. — англ.
1560-8034
PACS 33.20.Fb, 71.23.Cq
https://nasplib.isofts.kiev.ua/handle/123456789/118125
The glassy alloys of the GeS₂–HgS system in the range of 0–50 mol. % HgS were obtained by the melt quenching technique. Their Raman spectra were investigated. The dependence of the particularities of the light scattering bands on the chemical composition was analyzed.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Obtaining and optical properties of the glasses of the GeS₂–HgS system
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Obtaining and optical properties of the glasses of the GeS₂–HgS system
spellingShingle Obtaining and optical properties of the glasses of the GeS₂–HgS system
Nechyporuk, B.D.
Olekseyuk, I.D.
Yukhymchuk, V.O.
Filonenko, V.V.
Mazurets, I.I.
Parasyuk, O.V.
title_short Obtaining and optical properties of the glasses of the GeS₂–HgS system
title_full Obtaining and optical properties of the glasses of the GeS₂–HgS system
title_fullStr Obtaining and optical properties of the glasses of the GeS₂–HgS system
title_full_unstemmed Obtaining and optical properties of the glasses of the GeS₂–HgS system
title_sort obtaining and optical properties of the glasses of the ges₂–hgs system
author Nechyporuk, B.D.
Olekseyuk, I.D.
Yukhymchuk, V.O.
Filonenko, V.V.
Mazurets, I.I.
Parasyuk, O.V.
author_facet Nechyporuk, B.D.
Olekseyuk, I.D.
Yukhymchuk, V.O.
Filonenko, V.V.
Mazurets, I.I.
Parasyuk, O.V.
publishDate 2007
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The glassy alloys of the GeS₂–HgS system in the range of 0–50 mol. % HgS were obtained by the melt quenching technique. Their Raman spectra were investigated. The dependence of the particularities of the light scattering bands on the chemical composition was analyzed.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118125
citation_txt Obtaining and optical properties of the glasses of the GeS₂–HgS system / B.D. Nechyporuk, I.D. Olekseyuk, V.O. Yukhymchuk, V.V. Filonenko, I.I. Mazurets, O.V. Parasyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 65-69. — Бібліогр.: 11 назв. — англ.
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first_indexed 2025-12-07T20:50:16Z
last_indexed 2025-12-07T20:50:16Z
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