Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2007
• Main Authors: Moskvin, P.P., Rashkovetsky, L.V., Khodakovsky, V.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118126
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System / P.P. Moskvin, L.V. Rashkovetsky, V.V. Khodakovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 70-74. — Бібліогр.: 14 назв. — англ.

By comparing the results of calculations concerning the dependence of the
 parameters of a layer on the growth conditions with and without regard for mechanical
 strains in the growing system, we have analyzed the influence of the elastic energy of the
 strained solid phase on the phase formation in the Cd–Hg–Te system. It is shown that the
 occurrence of elastic strains in a layer results in an insignificant reduction of the growth
 rate and has almost no influence on the composition of a growing layer. The ideas of
 coherently matched phases in the presence of elastic deformations in the system, as well
 as the assumption about the existence of the chemical equilibrium of phases on the interface,
 give rather close results as for the crystallization of the material. Both approaches
 describe the experimental data on the growth of layers in various temperature-time
 regimes quite satisfactorily