Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System
By comparing the results of calculations concerning the dependence of the
 parameters of a layer on the growth conditions with and without regard for mechanical
 strains in the growing system, we have analyzed the influence of the elastic energy of the
 strained solid phase o...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2007 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118126 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System / P.P. Moskvin, L.V. Rashkovetsky, V.V. Khodakovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 70-74. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862724473738756096 |
|---|---|
| author | Moskvin, P.P. Rashkovetsky, L.V. Khodakovsky, V.V. |
| author_facet | Moskvin, P.P. Rashkovetsky, L.V. Khodakovsky, V.V. |
| citation_txt | Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System / P.P. Moskvin, L.V. Rashkovetsky, V.V. Khodakovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 70-74. — Бібліогр.: 14 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | By comparing the results of calculations concerning the dependence of the
parameters of a layer on the growth conditions with and without regard for mechanical
strains in the growing system, we have analyzed the influence of the elastic energy of the
strained solid phase on the phase formation in the Cd–Hg–Te system. It is shown that the
occurrence of elastic strains in a layer results in an insignificant reduction of the growth
rate and has almost no influence on the composition of a growing layer. The ideas of
coherently matched phases in the presence of elastic deformations in the system, as well
as the assumption about the existence of the chemical equilibrium of phases on the interface,
give rather close results as for the crystallization of the material. Both approaches
describe the experimental data on the growth of layers in various temperature-time
regimes quite satisfactorily
|
| first_indexed | 2025-12-07T18:47:24Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118126 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:47:24Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Moskvin, P.P. Rashkovetsky, L.V. Khodakovsky, V.V. 2017-05-28T17:59:30Z 2017-05-28T17:59:30Z 2007 Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System / P.P. Moskvin, L.V. Rashkovetsky, V.V. Khodakovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 70-74. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 64.90.+b https://nasplib.isofts.kiev.ua/handle/123456789/118126 By comparing the results of calculations concerning the dependence of the
 parameters of a layer on the growth conditions with and without regard for mechanical
 strains in the growing system, we have analyzed the influence of the elastic energy of the
 strained solid phase on the phase formation in the Cd–Hg–Te system. It is shown that the
 occurrence of elastic strains in a layer results in an insignificant reduction of the growth
 rate and has almost no influence on the composition of a growing layer. The ideas of
 coherently matched phases in the presence of elastic deformations in the system, as well
 as the assumption about the existence of the chemical equilibrium of phases on the interface,
 give rather close results as for the crystallization of the material. Both approaches
 describe the experimental data on the growth of layers in various temperature-time
 regimes quite satisfactorily en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System Article published earlier |
| spellingShingle | Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System Moskvin, P.P. Rashkovetsky, L.V. Khodakovsky, V.V. |
| title | Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System |
| title_full | Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System |
| title_fullStr | Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System |
| title_full_unstemmed | Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System |
| title_short | Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System |
| title_sort | influence of elastic strains on lpe growth kinetics in the cd-hg-te system |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118126 |
| work_keys_str_mv | AT moskvinpp influenceofelasticstrainsonlpegrowthkineticsinthecdhgtesystem AT rashkovetskylv influenceofelasticstrainsonlpegrowthkineticsinthecdhgtesystem AT khodakovskyvv influenceofelasticstrainsonlpegrowthkineticsinthecdhgtesystem |