Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System
By comparing the results of calculations concerning the dependence of the parameters of a layer on the growth conditions with and without regard for mechanical strains in the growing system, we have analyzed the influence of the elastic energy of the strained solid phase on the phase formation in...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2007 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118126 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System / P.P. Moskvin, L.V. Rashkovetsky, V.V. Khodakovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 70-74. — Бібліогр.: 14 назв. — англ. |
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Moskvin, P.P. Rashkovetsky, L.V. Khodakovsky, V.V. 2017-05-28T17:59:30Z 2017-05-28T17:59:30Z 2007 Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System / P.P. Moskvin, L.V. Rashkovetsky, V.V. Khodakovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 70-74. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 64.90.+b https://nasplib.isofts.kiev.ua/handle/123456789/118126 By comparing the results of calculations concerning the dependence of the parameters of a layer on the growth conditions with and without regard for mechanical strains in the growing system, we have analyzed the influence of the elastic energy of the strained solid phase on the phase formation in the Cd–Hg–Te system. It is shown that the occurrence of elastic strains in a layer results in an insignificant reduction of the growth rate and has almost no influence on the composition of a growing layer. The ideas of coherently matched phases in the presence of elastic deformations in the system, as well as the assumption about the existence of the chemical equilibrium of phases on the interface, give rather close results as for the crystallization of the material. Both approaches describe the experimental data on the growth of layers in various temperature-time regimes quite satisfactorily en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System |
| spellingShingle |
Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System Moskvin, P.P. Rashkovetsky, L.V. Khodakovsky, V.V. |
| title_short |
Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System |
| title_full |
Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System |
| title_fullStr |
Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System |
| title_full_unstemmed |
Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System |
| title_sort |
influence of elastic strains on lpe growth kinetics in the cd-hg-te system |
| author |
Moskvin, P.P. Rashkovetsky, L.V. Khodakovsky, V.V. |
| author_facet |
Moskvin, P.P. Rashkovetsky, L.V. Khodakovsky, V.V. |
| publishDate |
2007 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
By comparing the results of calculations concerning the dependence of the
parameters of a layer on the growth conditions with and without regard for mechanical
strains in the growing system, we have analyzed the influence of the elastic energy of the
strained solid phase on the phase formation in the Cd–Hg–Te system. It is shown that the
occurrence of elastic strains in a layer results in an insignificant reduction of the growth
rate and has almost no influence on the composition of a growing layer. The ideas of
coherently matched phases in the presence of elastic deformations in the system, as well
as the assumption about the existence of the chemical equilibrium of phases on the interface,
give rather close results as for the crystallization of the material. Both approaches
describe the experimental data on the growth of layers in various temperature-time
regimes quite satisfactorily
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118126 |
| citation_txt |
Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System / P.P. Moskvin, L.V. Rashkovetsky, V.V. Khodakovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 70-74. — Бібліогр.: 14 назв. — англ. |
| work_keys_str_mv |
AT moskvinpp influenceofelasticstrainsonlpegrowthkineticsinthecdhgtesystem AT rashkovetskylv influenceofelasticstrainsonlpegrowthkineticsinthecdhgtesystem AT khodakovskyvv influenceofelasticstrainsonlpegrowthkineticsinthecdhgtesystem |
| first_indexed |
2025-12-07T18:47:24Z |
| last_indexed |
2025-12-07T18:47:24Z |
| _version_ |
1850876356881022976 |