Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers
To study the influence of microwave irradiation on a spectrum of defect states
 in porous InP, we have measured the luminescence spectra within the range 0.50 to
 2.04 eV at 77 K before and after short and long (up to 600 s) treatments in air in the
 operation chamber of a ma...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2007 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118127 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers / R. Red'ko, S. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 75-76. — Бібліогр.: 5 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862637974324248576 |
|---|---|
| author | Red’ko, R. Red’ko, S. |
| author_facet | Red’ko, R. Red’ko, S. |
| citation_txt | Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers / R. Red'ko, S. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 75-76. — Бібліогр.: 5 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | To study the influence of microwave irradiation on a spectrum of defect states
in porous InP, we have measured the luminescence spectra within the range 0.50 to
2.04 eV at 77 K before and after short and long (up to 600 s) treatments in air in the
operation chamber of a magnetron at a frequency of 2.45 GHz and a surface power
density of 7.5 W/cm²
. We have obtained that the spectra of defects in researched samples
are essentially changed as well as the concentrations of local centers. Possible mechanisms
of observable changes in the semiconductor impurity-defect composition caused
by a microwave treatment are discussed.
|
| first_indexed | 2025-11-30T23:06:16Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118127 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-30T23:06:16Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Red’ko, R. Red’ko, S. 2017-05-28T18:00:07Z 2017-05-28T18:00:07Z 2007 Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers / R. Red'ko, S. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 75-76. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS 61.71.-y, 71.55.-I https://nasplib.isofts.kiev.ua/handle/123456789/118127 To study the influence of microwave irradiation on a spectrum of defect states
 in porous InP, we have measured the luminescence spectra within the range 0.50 to
 2.04 eV at 77 K before and after short and long (up to 600 s) treatments in air in the
 operation chamber of a magnetron at a frequency of 2.45 GHz and a surface power
 density of 7.5 W/cm²
 . We have obtained that the spectra of defects in researched samples
 are essentially changed as well as the concentrations of local centers. Possible mechanisms
 of observable changes in the semiconductor impurity-defect composition caused
 by a microwave treatment are discussed. The authors are grateful to Drs. I.N. Arsent’ev and
 V.P. Ulin for the provision of samples and to Dr.
 V.V. Milenin for his permanent interest to our work and
 the fruitful discussions. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers Article published earlier |
| spellingShingle | Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers Red’ko, R. Red’ko, S. |
| title | Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers |
| title_full | Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers |
| title_fullStr | Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers |
| title_full_unstemmed | Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers |
| title_short | Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers |
| title_sort | effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118127 |
| work_keys_str_mv | AT redkor effectofthemicrowaveradiationtreatmentofporousindiumphosphideonspectraofradiativerecombinationcenters AT redkos effectofthemicrowaveradiationtreatmentofporousindiumphosphideonspectraofradiativerecombinationcenters |